Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)

A. Posadas, M. Berg, H. Seo, A. De Lozanne, A. A. Demkov, David Smith, A. P. Kirk, D. Zhernokletov, R. M. Wallace

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Abstract

We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a TC of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO3 by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO 6 octahedra.

Original languageEnglish (US)
Article number053104
JournalApplied Physics Letters
Volume98
Issue number5
DOIs
StatePublished - Jan 31 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Posadas, A., Berg, M., Seo, H., De Lozanne, A., Demkov, A. A., Smith, D., Kirk, A. P., Zhernokletov, D., & Wallace, R. M. (2011). Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100). Applied Physics Letters, 98(5), [053104]. https://doi.org/10.1063/1.3549301