@article{90b169adfe524ce88123e1d13cb1e24c,
title = "Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)",
abstract = "We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a TC of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO3 by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO 6 octahedra.",
author = "A. Posadas and M. Berg and H. Seo and {De Lozanne}, A. and Demkov, {A. A.} and David Smith and Kirk, {A. P.} and D. Zhernokletov and Wallace, {R. M.}",
note = "Funding Information: The authors thank Miri Choi and Rytis Dargis for assistance with sample growth. The authors also acknowledge John Markert for allowing the use of his SQUID magnetometer, Hugo Celio for additional XPS measurements, and Jamal Ramdani for providing epigrade silicon wafers. This work was supported by the Office of Naval Research (ONR) under Grant No. N000 14-09-1-0908, the National Science Foundation (NSF) under Grant No. DMR-0548182, the U.S. Department of Energy (DOE) under Grant No. DE-SC0001878, and the Texas Advanced Computing Center. The authors also thank the NSF (Grant No. 0618242) for funding the x-ray photoelectron spectrometer used in this work. A.d.L. acknowledges funding support from NSF Grant Nos. DGE-0549417 and DMR-0810119. R.M.W. acknowledges funding support from ONR under Grant No. N000 14-09-1-0909 and NSF under Grant No. ECCS-0925844. ",
year = "2011",
month = jan,
day = "31",
doi = "10.1063/1.3549301",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",
}