TY - GEN
T1 - Epitaxial growth
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
AU - Faleev, Nikolai N.
AU - Smith, David
AU - Honsberg, Christiana
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Structural features, related to epitaxial growth and crystal defect creation in common III-V and Si-Ge materials were investigated by high-resolution x-ray diffraction and Transmission Electron Microscopy. Strong correlations between crystal perfection of epitaxial structures and growth conditions, specified by the initial elastic strain, deposition temperature and growth rate, elastic properties of epitaxial structures and thickness of epitaxial layers, were revealed. The investigations allowed suggest phenomenological model of defect creation in epitaxial structures, specify four different stages of defect creation, preferred crystalline defects, their density and spatial distribution in the volume. The main crystalline defect, responsible for deterioration of crystal perfection and physical properties of epitaxial structures were identified. Correct description of defect creation allows improved growth conditions and design of future devices to avoid/minimize deterioration of physical properties due to initially deteriorated growth conditions.
AB - Structural features, related to epitaxial growth and crystal defect creation in common III-V and Si-Ge materials were investigated by high-resolution x-ray diffraction and Transmission Electron Microscopy. Strong correlations between crystal perfection of epitaxial structures and growth conditions, specified by the initial elastic strain, deposition temperature and growth rate, elastic properties of epitaxial structures and thickness of epitaxial layers, were revealed. The investigations allowed suggest phenomenological model of defect creation in epitaxial structures, specify four different stages of defect creation, preferred crystalline defects, their density and spatial distribution in the volume. The main crystalline defect, responsible for deterioration of crystal perfection and physical properties of epitaxial structures were identified. Correct description of defect creation allows improved growth conditions and design of future devices to avoid/minimize deterioration of physical properties due to initially deteriorated growth conditions.
KW - crystal perfection of epitaxial structures
KW - epitaxial growth and defect creation
KW - high-resolution x-ray diffraction
KW - solar cells
KW - transmission electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=84912104876&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84912104876&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925022
DO - 10.1109/PVSC.2014.6925022
M3 - Conference contribution
AN - SCOPUS:84912104876
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 724
EP - 728
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 8 June 2014 through 13 June 2014
ER -