Abstract

Structural features, related to epitaxial growth and crystal defect creation in common III-V and Si-Ge materials were investigated by high-resolution x-ray diffraction and Transmission Electron Microscopy. Strong correlations between crystal perfection of epitaxial structures and growth conditions, specified by the initial elastic strain, deposition temperature and growth rate, elastic properties of epitaxial structures and thickness of epitaxial layers, were revealed. The investigations allowed suggest phenomenological model of defect creation in epitaxial structures, specify four different stages of defect creation, preferred crystalline defects, their density and spatial distribution in the volume. The main crystalline defect, responsible for deterioration of crystal perfection and physical properties of epitaxial structures were identified. Correct description of defect creation allows improved growth conditions and design of future devices to avoid/minimize deterioration of physical properties due to initially deteriorated growth conditions.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages724-728
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Epitaxial growth
Defects
Deterioration
Physical properties
Crystalline materials
Crystals
Crystal defects
Defect density
Epitaxial layers
Spatial distribution
Diffraction
Transmission electron microscopy
X rays
Temperature

Keywords

  • crystal perfection of epitaxial structures
  • epitaxial growth and defect creation
  • high-resolution x-ray diffraction
  • solar cells
  • transmission electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Faleev, N. N., Smith, D., & Honsberg, C. (2014). Epitaxial growth: Phenomenological model of defect creation. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 724-728). [6925022] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925022

Epitaxial growth : Phenomenological model of defect creation. / Faleev, Nikolai N.; Smith, David; Honsberg, Christiana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 724-728 6925022.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Faleev, NN, Smith, D & Honsberg, C 2014, Epitaxial growth: Phenomenological model of defect creation. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925022, Institute of Electrical and Electronics Engineers Inc., pp. 724-728, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925022
Faleev NN, Smith D, Honsberg C. Epitaxial growth: Phenomenological model of defect creation. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 724-728. 6925022 https://doi.org/10.1109/PVSC.2014.6925022
Faleev, Nikolai N. ; Smith, David ; Honsberg, Christiana. / Epitaxial growth : Phenomenological model of defect creation. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 724-728
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