Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN

R. Roucka, J. Tolle, Andrew Chizmeshya, Peter Crozier, C. D. Poweleit, David Smith, John Kouvetakis, I. S T Tsong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The growth of single-phase SiCAlN epitaxial films from mutually insoluble components SiC and AlN is accomplished by molecular beam epitaxy via the use of a specially designed unimolecular precursor H3SiCN. The film growth takes place on 6H-SiC(0 0 0 1) and Si(1 1 1) substrates at 750 °C. The growth on Si(111) does not require prior removal of the native oxide layer. In situ reaction of the oxide layer with fluxes of Al atoms and the H3SiCN precursor transforms the amorphous oxide into a Si-Al-O-N crystalline interface on which heteroepitaxy of SiCAlN proceeds. Theoretical structural models of the hexagonal SiCAlN agree well with the experimental microstructure observed in cross-sectional electron microscopy images. Calculations show a fundamental band gap at 3.2 eV for the stoichiometric SiCAlN, in agreement with photoluminescence data.

Original languageEnglish (US)
Pages (from-to)872-878
Number of pages7
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
StatePublished - May 15 2003

Fingerprint

Epitaxial growth
Oxides
broadband
oxides
Epitaxial films
Film growth
Molecular beam epitaxy
Electron microscopy
electron microscopy
Photoluminescence
Energy gap
molecular beam epitaxy
Fluxes
Crystalline materials
photoluminescence
Atoms
microstructure
Microstructure
Substrates
atoms

Keywords

  • Heteroepitaxy
  • Molecular beam epitaxy
  • Wide band gap semiconductor films

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN. / Roucka, R.; Tolle, J.; Chizmeshya, Andrew; Crozier, Peter; Poweleit, C. D.; Smith, David; Kouvetakis, John; Tsong, I. S T.

In: Applied Surface Science, Vol. 212-213, No. SPEC., 15.05.2003, p. 872-878.

Research output: Contribution to journalArticle

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AU - Poweleit, C. D.

AU - Smith, David

AU - Kouvetakis, John

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N2 - The growth of single-phase SiCAlN epitaxial films from mutually insoluble components SiC and AlN is accomplished by molecular beam epitaxy via the use of a specially designed unimolecular precursor H3SiCN. The film growth takes place on 6H-SiC(0 0 0 1) and Si(1 1 1) substrates at 750 °C. The growth on Si(111) does not require prior removal of the native oxide layer. In situ reaction of the oxide layer with fluxes of Al atoms and the H3SiCN precursor transforms the amorphous oxide into a Si-Al-O-N crystalline interface on which heteroepitaxy of SiCAlN proceeds. Theoretical structural models of the hexagonal SiCAlN agree well with the experimental microstructure observed in cross-sectional electron microscopy images. Calculations show a fundamental band gap at 3.2 eV for the stoichiometric SiCAlN, in agreement with photoluminescence data.

AB - The growth of single-phase SiCAlN epitaxial films from mutually insoluble components SiC and AlN is accomplished by molecular beam epitaxy via the use of a specially designed unimolecular precursor H3SiCN. The film growth takes place on 6H-SiC(0 0 0 1) and Si(1 1 1) substrates at 750 °C. The growth on Si(111) does not require prior removal of the native oxide layer. In situ reaction of the oxide layer with fluxes of Al atoms and the H3SiCN precursor transforms the amorphous oxide into a Si-Al-O-N crystalline interface on which heteroepitaxy of SiCAlN proceeds. Theoretical structural models of the hexagonal SiCAlN agree well with the experimental microstructure observed in cross-sectional electron microscopy images. Calculations show a fundamental band gap at 3.2 eV for the stoichiometric SiCAlN, in agreement with photoluminescence data.

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