Epitaxial growth of the pseudo-binary wide band gap semiconductor SiCAlN

R. Roucka, J. Tolle, Andrew Chizmeshya, Peter Crozier, C. D. Poweleit, David Smith, John Kouvetakis, I. S T Tsong

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The growth of single-phase SiCAlN epitaxial films from mutually insoluble components SiC and AlN is accomplished by molecular beam epitaxy via the use of a specially designed unimolecular precursor H 3 SiCN. The film growth takes place on 6H-SiC(0 0 0 1) and Si(1 1 1) substrates at 750 °C. The growth on Si(111) does not require prior removal of the native oxide layer. In situ reaction of the oxide layer with fluxes of Al atoms and the H 3 SiCN precursor transforms the amorphous oxide into a Si-Al-O-N crystalline interface on which heteroepitaxy of SiCAlN proceeds. Theoretical structural models of the hexagonal SiCAlN agree well with the experimental microstructure observed in cross-sectional electron microscopy images. Calculations show a fundamental band gap at 3.2 eV for the stoichiometric SiCAlN, in agreement with photoluminescence data.

Original languageEnglish (US)
Pages (from-to)872-878
Number of pages7
JournalApplied Surface Science
Volume212-213
Issue numberSPEC.
DOIs
StatePublished - May 15 2003

Keywords

  • Heteroepitaxy
  • Molecular beam epitaxy
  • Wide band gap semiconductor films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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