Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

J. Tolle, R. Roucka, I. S T Tsong, C. Ritter, Peter Crozier, Andrew Chizmeshya, John Kouvetakis

Research output: Contribution to journalArticle

56 Scopus citations

Abstract

The growth of metallic and reflecting ZrB2 films was conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH4)4. The ZrB2 buffer layer on Si(111) provided a near lattice-matched template for the growth of epitaxial GaN. The reflective nature of the ZrB2 surface presented an added bonus to optoelectronic applications of the 111- nitrides.

Original languageEnglish (US)
Pages (from-to)2398-2400
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number15
DOIs
StatePublished - Apr 14 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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