The growth of metallic and reflecting ZrB2 films was conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH4)4. The ZrB2 buffer layer on Si(111) provided a near lattice-matched template for the growth of epitaxial GaN. The reflective nature of the ZrB2 surface presented an added bonus to optoelectronic applications of the 111- nitrides.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 14 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)