Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

J. Tolle; R. Roucka; I. S T Tsong; C. Ritter; Peter Crozier; Andrew Chizmeshya; John Kouvetakis

doi:10.1063/1.1566099

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

J. Tolle, R. Roucka, I. S T Tsong, C. Ritter, Peter Crozier, Andrew Chizmeshya, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

The growth of metallic and reflecting ZrB₂ films was conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH₄)₄. The ZrB₂ buffer layer on Si(111) provided a near lattice-matched template for the growth of epitaxial GaN. The reflective nature of the ZrB₂ surface presented an added bonus to optoelectronic applications of the 111- nitrides.

Original language	English (US)
Pages (from-to)	2398-2400
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	15
DOIs	https://doi.org/10.1063/1.1566099
State	Published - Apr 14 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1566099

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title = "Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer",

abstract = "The growth of metallic and reflecting ZrB2 films was conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH4)4. The ZrB2 buffer layer on Si(111) provided a near lattice-matched template for the growth of epitaxial GaN. The reflective nature of the ZrB2 surface presented an added bonus to optoelectronic applications of the 111- nitrides.",

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T1 - Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

AU - Tolle, J.

AU - Roucka, R.

AU - Tsong, I. S T

AU - Ritter, C.

AU - Crozier, Peter

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

PY - 2003/4/14

Y1 - 2003/4/14

N2 - The growth of metallic and reflecting ZrB2 films was conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH4)4. The ZrB2 buffer layer on Si(111) provided a near lattice-matched template for the growth of epitaxial GaN. The reflective nature of the ZrB2 surface presented an added bonus to optoelectronic applications of the 111- nitrides.

AB - The growth of metallic and reflecting ZrB2 films was conducted on Si(111) substrates at 900 °C using a single-source unimolecular precursor Zr(BH4)4. The ZrB2 buffer layer on Si(111) provided a near lattice-matched template for the growth of epitaxial GaN. The reflective nature of the ZrB2 surface presented an added bonus to optoelectronic applications of the 111- nitrides.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

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