Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching

Engineering & Materials Science

• Epitaxial growth 100%
• Reactive ion etching 96%
• Stacking faults 67%
• Silicon 56%
• Substrates 50%
• Molecular beams 42%
• Epilayers 40%
• Molecular beam epitaxy 36%

Chemical Compounds

• Stacking Fault 96%
• Epitaxial Growth 86%
• Threading Dislocation 66%
• Etching 64%
• Molecular Beam Epitaxy 51%
• Molecular Beam 42%
• Ion 28%
• Surface 11%

Physics & Astronomy

• mesas 81%
• etching 53%
• crystal defects 46%
• silicon 38%
• ions 33%
• molecular beams 24%
• molecular beam epitaxy 20%
• wafers 17%