Epitaxial growth of cdte on (211) silicon mesas formed by deep reactive ion etching

Jay Molstad, Phil Boyd, Justin Markunas, David Smith, E. D. Smith, Eli Gordon, J. H. Dinan

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

By patterning a (211) Si substrate wafer into mesas and depositing CdTe onto this substrate by molecular beam epitaxy (MBE), we achieved the removal of nearly all threading dislocations from the epilayer. Faceting of mesa surfaces is observed and characterized. Deposition of CdTe on mesa sidewalls nucleates stacking faults along the (111) planes, which result in nonradiative carrier recombination. The density of these stacking faults can be reduced if care is taken to align the molecular beams from the effusion cells with particular crystallographic directions of the substrate.

Original languageEnglish (US)
Pages (from-to)1636-1640
Number of pages5
JournalJournal of Electronic Materials
Volume35
Issue number8
DOIs
StatePublished - Aug 2006

    Fingerprint

Keywords

  • CdTe
  • Focal plane array
  • Molecular beam epitaxy (MBE)
  • Threading dislocations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this