Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer

John Tolle, John Kouvetakis, Dae Woo Kim, S. Mahajan, A. Bell, Fernando Ponce, I. S T Tsong, Michael L. Kottke, Zhihao D. Chen

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Abstract

The effectiveness of the ZrB 2(0001) buffer layer for the metallorganic chemical vapor deposition (MOCVD) growth of Al xGa 1-xN on Si(111) substrates was demonstrated. It was observed that no unintentional Si doping occurs in the Al 0.2Ga 0.8N film even at the MOCVD growth temperature of 1050°C. It was shown that the intensity and FWHM of the CL peak corresponding to band-edge emission of 3.87 eV were comparable to those from a high-quality undoped Al 0.2Ga 0.8N commercial sample grown on sapphire. In-plane lattice constant of ZrB 2(0001), a=3.169 Å, has a small 0.6% mismatch with that of GaN(0001) where a=3.189 Å.

Original languageEnglish (US)
Pages (from-to)3510-3512
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Bell, A., Ponce, F., Tsong, I. S. T., Kottke, M. L., & Chen, Z. D. (2004). Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer. Applied Physics Letters, 84(18), 3510-3512. https://doi.org/10.1063/1.1738944