Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer

John Tolle, John Kouvetakis, Dae Woo Kim, S. Mahajan, A. Bell, Fernando Ponce, I. S T Tsong, Michael L. Kottke, Zhihao D. Chen

Research output: Contribution to journalArticle

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Abstract

The effectiveness of the ZrB 2(0001) buffer layer for the metallorganic chemical vapor deposition (MOCVD) growth of Al xGa 1-xN on Si(111) substrates was demonstrated. It was observed that no unintentional Si doping occurs in the Al 0.2Ga 0.8N film even at the MOCVD growth temperature of 1050°C. It was shown that the intensity and FWHM of the CL peak corresponding to band-edge emission of 3.87 eV were comparable to those from a high-quality undoped Al 0.2Ga 0.8N commercial sample grown on sapphire. In-plane lattice constant of ZrB 2(0001), a=3.169 Å, has a small 0.6% mismatch with that of GaN(0001) where a=3.189 Å.

Original languageEnglish (US)
Pages (from-to)3510-3512
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

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buffers
vapor deposition
sapphire
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer. / Tolle, John; Kouvetakis, John; Kim, Dae Woo; Mahajan, S.; Bell, A.; Ponce, Fernando; Tsong, I. S T; Kottke, Michael L.; Chen, Zhihao D.

In: Applied Physics Letters, Vol. 84, No. 18, 03.05.2004, p. 3510-3512.

Research output: Contribution to journalArticle

Tolle, J, Kouvetakis, J, Kim, DW, Mahajan, S, Bell, A, Ponce, F, Tsong, IST, Kottke, ML & Chen, ZD 2004, 'Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer', Applied Physics Letters, vol. 84, no. 18, pp. 3510-3512. https://doi.org/10.1063/1.1738944
Tolle, John ; Kouvetakis, John ; Kim, Dae Woo ; Mahajan, S. ; Bell, A. ; Ponce, Fernando ; Tsong, I. S T ; Kottke, Michael L. ; Chen, Zhihao D. / Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer. In: Applied Physics Letters. 2004 ; Vol. 84, No. 18. pp. 3510-3512.
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AU - Mahajan, S.

AU - Bell, A.

AU - Ponce, Fernando

AU - Tsong, I. S T

AU - Kottke, Michael L.

AU - Chen, Zhihao D.

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AB - The effectiveness of the ZrB 2(0001) buffer layer for the metallorganic chemical vapor deposition (MOCVD) growth of Al xGa 1-xN on Si(111) substrates was demonstrated. It was observed that no unintentional Si doping occurs in the Al 0.2Ga 0.8N film even at the MOCVD growth temperature of 1050°C. It was shown that the intensity and FWHM of the CL peak corresponding to band-edge emission of 3.87 eV were comparable to those from a high-quality undoped Al 0.2Ga 0.8N commercial sample grown on sapphire. In-plane lattice constant of ZrB 2(0001), a=3.169 Å, has a small 0.6% mismatch with that of GaN(0001) where a=3.189 Å.

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