Epitaxial growth of β-Ga2O3on SrTiO3(001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Eric Dombrowski, Alexander A. Demkov

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and (1 ¯ 12)-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO «110»and β-Ga2O3 [021] || STO «100», respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

Original languageEnglish (US)
Article number145702
JournalJournal of Applied Physics
Volume131
Issue number14
DOIs
StatePublished - Apr 14 2022
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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