Epitaxial growth of β-Ga2O3on SrTiO3(001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Tobias Hadamek; Agham B. Posadas; Fatima Al-Quaiti; David J. Smith; Martha R. McCartney; Eric Dombrowski; Alexander A. Demkov

doi:10.1063/5.0082859

Epitaxial growth of β-Ga₂O₃on SrTiO₃(001) and SrTiO₃-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Tobias Hadamek, Agham B. Posadas, Fatima Al-Quaiti, David J. Smith, Martha R. McCartney, Eric Dombrowski, Alexander A. Demkov

Physics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and (1 ¯ 12)-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO «110»and β-Ga2O3 [021] || STO «100», respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

Original language	English (US)
Article number	145702
Journal	Journal of Applied Physics
Volume	131
Issue number	14
DOIs	https://doi.org/10.1063/5.0082859
State	Published - Apr 14 2022

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/5.0082859

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@article{98f3f8853ae3437ab360e35a3f856303,

title = "Epitaxial growth of β-Ga2O3on SrTiO3(001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy",

abstract = "Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and (1 ¯ 12)-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO «110»and β-Ga2O3 [021] || STO «100», respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.",

author = "Tobias Hadamek and Posadas, {Agham B.} and Fatima Al-Quaiti and Smith, {David J.} and McCartney, {Martha R.} and Eric Dombrowski and Demkov, {Alexander A.}",

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language = "English (US)",

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T1 - Epitaxial growth of β-Ga2O3on SrTiO3(001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

AU - Hadamek, Tobias

AU - Posadas, Agham B.

AU - Al-Quaiti, Fatima

AU - Smith, David J.

AU - McCartney, Martha R.

AU - Dombrowski, Eric

AU - Demkov, Alexander A.

PY - 2022/4/14

Y1 - 2022/4/14

N2 - Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and (1 ¯ 12)-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO «110»and β-Ga2O3 [021] || STO «100», respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

AB - Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and (1 ¯ 12)-oriented β-Ga2O3 grains. The structural alignments are β-Ga2O3[010] || STO «110»and β-Ga2O3 [021] || STO «100», respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial β-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth.

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ER -

Epitaxial growth of β-Ga₂O₃on SrTiO₃(001) and SrTiO₃-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

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