Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications

L. Vescan; Michael Goryll; K. Grimm; S. Wickenhaeuser; T. Stoica

Epitaxial growth by low pressure chemical vapour deposition of Si_1-xGe_x/Si and applications

L. Vescan, Michael Goryll, K. Grimm, S. Wickenhaeuser, T. Stoica

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

Original language	English (US)
Title of host publication	Proceedings of the International Semiconductor Conference, CAS
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	405-413
Number of pages	9
Volume	2
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania Duration: Oct 7 1997 → Oct 11 1997

Other

Other	Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
City	Sinaia, Romania
Period	10/7/97 → 10/11/97

ASJC Scopus subject areas

General Engineering

Cite this

Vescan, L, Goryll, M, Grimm, K, Wickenhaeuser, S & Stoica, T 1997, Epitaxial growth by low pressure chemical vapour deposition of Si_1-xGe_x/Si and applications. in Proceedings of the International Semiconductor Conference, CAS. vol. 2, IEEE, Piscataway, NJ, United States, pp. 405-413, Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2), Sinaia, Romania, 10/7/97.

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title = "Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications",

abstract = "Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.",

author = "L. Vescan and Michael Goryll and K. Grimm and S. Wickenhaeuser and T. Stoica",

year = "1997",

language = "English (US)",

volume = "2",

pages = "405--413",

booktitle = "Proceedings of the International Semiconductor Conference, CAS",

publisher = "IEEE",

note = "Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) ; Conference date: 07-10-1997 Through 11-10-1997",

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TY - GEN

T1 - Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications

AU - Vescan, L.

AU - Goryll, Michael

AU - Grimm, K.

AU - Wickenhaeuser, S.

AU - Stoica, T.

PY - 1997

Y1 - 1997

N2 - Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

AB - Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

UR - http://www.scopus.com/inward/record.url?scp=0030638081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030638081&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030638081

VL - 2

SP - 405

EP - 413

BT - Proceedings of the International Semiconductor Conference, CAS

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)

Y2 - 7 October 1997 through 11 October 1997

ER -

Epitaxial growth by low pressure chemical vapour deposition of Si_1-xGe_x/Si and applications

Abstract

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ASJC Scopus subject areas

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