Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications

L. Vescan, Michael Goryll, K. Grimm, S. Wickenhaeuser, T. Stoica

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

Original languageEnglish (US)
Title of host publicationProceedings of the International Semiconductor Conference, CAS
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages405-413
Number of pages9
Volume2
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania
Duration: Oct 7 1997Oct 11 1997

Other

OtherProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
CitySinaia, Romania
Period10/7/9710/11/97

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Vescan, L., Goryll, M., Grimm, K., Wickenhaeuser, S., & Stoica, T. (1997). Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications. In Proceedings of the International Semiconductor Conference, CAS (Vol. 2, pp. 405-413). Piscataway, NJ, United States: IEEE.