Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications

L. Vescan, Michael Goryll, K. Grimm, S. Wickenhaeuser, T. Stoica

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

Original languageEnglish (US)
Title of host publicationProceedings of the International Semiconductor Conference, CAS
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages405-413
Number of pages9
Volume2
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania
Duration: Oct 7 1997Oct 11 1997

Other

OtherProceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2)
CitySinaia, Romania
Period10/7/9710/11/97

Fingerprint

Low pressure chemical vapor deposition
Epitaxial growth
Microelectronics
Optoelectronic devices
Light emitting diodes
Nanostructures
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Vescan, L., Goryll, M., Grimm, K., Wickenhaeuser, S., & Stoica, T. (1997). Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications. In Proceedings of the International Semiconductor Conference, CAS (Vol. 2, pp. 405-413). Piscataway, NJ, United States: IEEE.

Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications. / Vescan, L.; Goryll, Michael; Grimm, K.; Wickenhaeuser, S.; Stoica, T.

Proceedings of the International Semiconductor Conference, CAS. Vol. 2 Piscataway, NJ, United States : IEEE, 1997. p. 405-413.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Vescan, L, Goryll, M, Grimm, K, Wickenhaeuser, S & Stoica, T 1997, Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications. in Proceedings of the International Semiconductor Conference, CAS. vol. 2, IEEE, Piscataway, NJ, United States, pp. 405-413, Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2), Sinaia, Romania, 10/7/97.
Vescan L, Goryll M, Grimm K, Wickenhaeuser S, Stoica T. Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications. In Proceedings of the International Semiconductor Conference, CAS. Vol. 2. Piscataway, NJ, United States: IEEE. 1997. p. 405-413
Vescan, L. ; Goryll, Michael ; Grimm, K. ; Wickenhaeuser, S. ; Stoica, T. / Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications. Proceedings of the International Semiconductor Conference, CAS. Vol. 2 Piscataway, NJ, United States : IEEE, 1997. pp. 405-413
@inproceedings{dbc78dff1c1d45e484d9adfb3fb66e1c,
title = "Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications",
abstract = "Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.",
author = "L. Vescan and Michael Goryll and K. Grimm and S. Wickenhaeuser and T. Stoica",
year = "1997",
language = "English (US)",
volume = "2",
pages = "405--413",
booktitle = "Proceedings of the International Semiconductor Conference, CAS",
publisher = "IEEE",

}

TY - GEN

T1 - Epitaxial growth by low pressure chemical vapour deposition of Si1-xGex/Si and applications

AU - Vescan, L.

AU - Goryll, Michael

AU - Grimm, K.

AU - Wickenhaeuser, S.

AU - Stoica, T.

PY - 1997

Y1 - 1997

N2 - Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

AB - Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.

UR - http://www.scopus.com/inward/record.url?scp=0030638081&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030638081&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030638081

VL - 2

SP - 405

EP - 413

BT - Proceedings of the International Semiconductor Conference, CAS

PB - IEEE

CY - Piscataway, NJ, United States

ER -