Abstract
Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented.
| Original language | English (US) |
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| Title of host publication | Proceedings of the International Semiconductor Conference, CAS |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 405-413 |
| Number of pages | 9 |
| Volume | 2 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) - Sinaia, Romania Duration: Oct 7 1997 → Oct 11 1997 |
Other
| Other | Proceedings of the 1997 International Semiconductor Conference, CAS. Part 1 (of 2) |
|---|---|
| City | Sinaia, Romania |
| Period | 10/7/97 → 10/11/97 |
ASJC Scopus subject areas
- Engineering(all)