Epitaxial growth and characterization of Ge1-xCx alloys on Si(100)

M. Krishnamurthy, J. S. Drucker, A. Challa

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Abstract

The initial stages (<20 monolayers) of molecular beam epitaxial growth of Ge1-xCx on Si(100) has been studied using both in situ surface analytical techniques and ex situ electron microscopy. The Ge 1-xCx films studied had nominal C concentrations of 0.2<x<0.8. In situ reflection high-energy electron diffraction indicates crystalline, layer-by-layer growth for room temperature deposition of lower C concentrations (x<0.4) films and amorphous growth for higher C concentrations. Subsequent high-temperature anneals between 350 and 600°C caused the Ge and C to phase separate, with the Ge forming defective islands while the C precipitates out of the diamond lattice. Mechanisms leading to the C concentration-dependent island morphologies are suggested.

Original languageEnglish (US)
Pages (from-to)7070-7073
Number of pages4
JournalJournal of Applied Physics
Volume78
Issue number12
DOIs
StatePublished - Dec 1 1995

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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