Epitaxial GaP grown on Silicon by MEE and MBE Techniques as a Pathway for Dilute Nitride-Si Tandem Solar Cells

Srinath Murali, Nicholas P. Irvin, Chaomin Zhang, Richard R. King, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Dilute nitride materials grown on Si offer a pathway for inexpensive, lattice matched multijunction solar cells. A comparison in device performance between two-terminal and three-terminal tandem solar cells with a dilute nitride top cell and a Si bottom cell was done by detailed-balance modelling. The hetero-integration of dilute nitrides on Si is an important part of realizing such a solar cell structure. Towards this end, a first key step is to optimize the growth of GaP on Si. In this work, the surface of GaP grown epitaxially on Si wafers of various orientations was studied using atomic force microscopy (AFM). Pits were observed on the GaP surface and showed an increase in feature size with higher growth temperatures.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1044-1048
Number of pages5
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
CountryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • Index Terms - Dilute nitrides
  • MBE
  • multijunction
  • Si

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Murali, S., Irvin, N. P., Zhang, C., King, R. R., & Honsberg, C. B. (2019). Epitaxial GaP grown on Silicon by MEE and MBE Techniques as a Pathway for Dilute Nitride-Si Tandem Solar Cells. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 1044-1048). [8980577] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980577