@inproceedings{49334889eaff4448be43eff971f6a07c,
title = "Epitaxial GaAsP/Si Tandem Solar Cells with Integrated Light Trapping",
abstract = "We investigate the effect of Si random pyramid texturing on 1.7eV/1.1eV GaAs0.77P0.23/Si 2-terminal tandem solar cells (hereafter GaAsP/Si). Due to the light trapping effect, rear surface texturing increases the short-circuit current density of the Si bottom cell by 2.76 mA/cm2 relative to an untextured cell. For the GaAsP top cell, we investigate the use of lattice-matched AlGaAsP as the back surface field (BSF) layer and also as an intermediate barrier between the n-GaAsP emitter and n-AlInP window. Despite parasitic absorption in the n-AlGaAsP barrier, our 1.0 cm2 GaAsP/Si tandem cell with backside textured Si bottom cell exhibits an NREL-certified AM1.5G efficiency of 18.7%. A reduction of device area from 1.0 cm2 to 0.13 cm2 results in an efficiency of 19.5% due to lower series resistance. Development of >20%-efficient tandem cells is ongoing.",
keywords = "GaAsP, epitaxial III-V/Si integration, light trapping, metamorphic growth, tandem",
author = "S. Fan and Z. Yu and Y. Sun and W. Weigand and P. Dhingra and M. Kim and Hool, {R. D.} and Ratta, {E. D.} and Holman, {Z. C.} and Lee, {M. L.}",
note = "Funding Information: National Science Foundation under Grants 1736181 Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980664",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "730--733",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
}