@inproceedings{ab930bfaf1c1437993d15c2e2fb86fd0,
title = "Epitaxial GaAsP/Si Solar Cells with High Quantum Efficiency",
abstract = "We review recent progress in GaAsP/Si tandem cells and present a GaAsP/Si tandem cell with a high total short-circuit current density of 38.2 mA/cm2. Comparing the external quantum efficiency (EQE) of this tandem cell with benchmark perovskite/Si tandem cells reveals that at identical top cell bandgap, the GaAsP top cell exhibits higher or comparable EQE at all wavelengths, while the GaAsP-filtered Si bottom cell exhibits insufficient light trapping and parasitic absorption. Future improvement in the transparency of the GaAsyP1-y graded buffer layer and the light trapping in the Si bottom cell promises GaAsP/Si tandem cells with a short circuit density above 20 mA/cm2.",
keywords = "Epitaxial III-V/Si integration, GaAsP, current match, red response, tandem cell",
author = "Shizhao Fan and Yu, {Zhengshan J.} and Hool, {Ryan D.} and Pankul Dhingra and William Weigand and Mijung Kim and Ratta, {Erik D.} and Li, {Brian D.} and Yukun Sun and Holman, {Zachary C.} and Lee, {Minjoo L.}",
note = "Funding Information: 1509864. R. D. Hool and B. D. Li were supported by National Aeronautics Funding Information: and Space Administration (NASA) Space Technology Research Fellowships 978-1-7281-6115-0/20/$31.00 {\textcopyright}2020 IEEE under Grants No. 80NSSC18K1171 and 80NSSC19K1174, respectively. Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300735",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2370--2373",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
}