Epitaxial GaAsP/Si Solar Cells with High Quantum Efficiency

Shizhao Fan, Zhengshan J. Yu, Ryan D. Hool, Pankul Dhingra, William Weigand, Mijung Kim, Erik D. Ratta, Brian D. Li, Yukun Sun, Zachary C. Holman, Minjoo L. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We review recent progress in GaAsP/Si tandem cells and present a GaAsP/Si tandem cell with a high total short-circuit current density of 38.2 mA/cm2. Comparing the external quantum efficiency (EQE) of this tandem cell with benchmark perovskite/Si tandem cells reveals that at identical top cell bandgap, the GaAsP top cell exhibits higher or comparable EQE at all wavelengths, while the GaAsP-filtered Si bottom cell exhibits insufficient light trapping and parasitic absorption. Future improvement in the transparency of the GaAsyP1-y graded buffer layer and the light trapping in the Si bottom cell promises GaAsP/Si tandem cells with a short circuit density above 20 mA/cm2.

Original languageEnglish (US)
Title of host publication2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2370-2373
Number of pages4
ISBN (Electronic)9781728161150
DOIs
StatePublished - Jun 14 2020
Externally publishedYes
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: Jun 15 2020Aug 21 2020

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2020-June
ISSN (Print)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/TerritoryCanada
CityCalgary
Period6/15/208/21/20

Keywords

  • Epitaxial III-V/Si integration
  • GaAsP
  • current match
  • red response
  • tandem cell

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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