Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source

P. T. Goeller; Z. Wang; D. E. Sayers; J. T. Glass; Robert Nemanich

Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source

P. T. Goeller, Z. Wang, D. E. Sayers, J. T. Glass, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Thin films of (100) oriented CoSi ₂ have been electron beam evaporated onto Si(100) substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED) pattern resulted after annealing the films to 800 °C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi ₂. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi ₂ variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	511-516
Number of pages	6
Volume	402
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995

Other

Other	Proceedings of the 1995 MRS Fall Symposium
City	Boston, MA, USA
Period	11/27/95 → 11/30/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{fe118d1e6b8e4667b465eab811688a12,

title = "Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source",

abstract = "Thin films of (100) oriented CoSi 2 have been electron beam evaporated onto Si(100) substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED) pattern resulted after annealing the films to 800 °C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi 2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi 2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film. ",

author = "Goeller, {P. T.} and Z. Wang and Sayers, {D. E.} and Glass, {J. T.} and Robert Nemanich",

year = "1996",

language = "English (US)",

volume = "402",

pages = "511--516",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Symposium ; Conference date: 27-11-1995 Through 30-11-1995",

}

TY - GEN

T1 - Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source

AU - Goeller, P. T.

AU - Wang, Z.

AU - Sayers, D. E.

AU - Glass, J. T.

AU - Nemanich, Robert

PY - 1996

Y1 - 1996

N2 - Thin films of (100) oriented CoSi 2 have been electron beam evaporated onto Si(100) substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED) pattern resulted after annealing the films to 800 °C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi 2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi 2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film.

AB - Thin films of (100) oriented CoSi 2 have been electron beam evaporated onto Si(100) substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED) pattern resulted after annealing the films to 800 °C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi 2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi 2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film.

UR - http://www.scopus.com/inward/record.url?scp=0029772302&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029772302&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029772302

VL - 402

SP - 511

EP - 516

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Symposium

Y2 - 27 November 1995 through 30 November 1995

ER -

Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source

Abstract

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ASJC Scopus subject areas

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