Epitaxial Dy Si2 nanowire formation on stepped Si(111)

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We report the growth of epitaxial Dy Si2 nanowires (NW) with a single orientation on miscut Si(111). Using high-resolution electron microscopy, we determine that the islands are hexagonal Dy Si2 with orientation Dy Si2 (0001) ∥Si (111), corresponding to a near-perfect lattice match. The NW islands develop extended defects that correlate perfectly with individual step bunches at the buried interface, produced during growth. By contrast, islands grown on step-free substrates develop a broad, two-dimensional shape with no defects. We suggest that the NW shape results from the energy cost of extended defects, which inhibits growth across step edges.

Original languageEnglish (US)
Article number143110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - Apr 4 2005


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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