Epitaxial Dy Si2 nanowire formation on stepped Si(111)

Zhian He; David Smith; Peter Bennett

doi:10.1063/1.1897424

Epitaxial Dy Si2 nanowire formation on stepped Si(111)

Zhian He, David Smith, Peter Bennett

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We report the growth of epitaxial Dy Si2 nanowires (NW) with a single orientation on miscut Si(111). Using high-resolution electron microscopy, we determine that the islands are hexagonal Dy Si2 with orientation Dy Si2 (0001) ∥Si (111), corresponding to a near-perfect lattice match. The NW islands develop extended defects that correlate perfectly with individual step bunches at the buried interface, produced during growth. By contrast, islands grown on step-free substrates develop a broad, two-dimensional shape with no defects. We suggest that the NW shape results from the energy cost of extended defects, which inhibits growth across step edges.

Original language	English (US)
Article number	143110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	14
DOIs	https://doi.org/10.1063/1.1897424
State	Published - Apr 4 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1897424

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title = "Epitaxial Dy Si2 nanowire formation on stepped Si(111)",

abstract = "We report the growth of epitaxial Dy Si2 nanowires (NW) with a single orientation on miscut Si(111). Using high-resolution electron microscopy, we determine that the islands are hexagonal Dy Si2 with orientation Dy Si2 (0001) ∥Si (111), corresponding to a near-perfect lattice match. The NW islands develop extended defects that correlate perfectly with individual step bunches at the buried interface, produced during growth. By contrast, islands grown on step-free substrates develop a broad, two-dimensional shape with no defects. We suggest that the NW shape results from the energy cost of extended defects, which inhibits growth across step edges.",

author = "Zhian He and David Smith and Peter Bennett",

note = "Funding Information: This work was supported by NSF Grant No. ECS0304682 (NIRT). We acknowledge use of facilities in the John M. Cowley Center for High-Resolution Electron Microscopy at Arizona State University. ",

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AU - He, Zhian

AU - Smith, David

AU - Bennett, Peter

N1 - Funding Information: This work was supported by NSF Grant No. ECS0304682 (NIRT). We acknowledge use of facilities in the John M. Cowley Center for High-Resolution Electron Microscopy at Arizona State University.

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N2 - We report the growth of epitaxial Dy Si2 nanowires (NW) with a single orientation on miscut Si(111). Using high-resolution electron microscopy, we determine that the islands are hexagonal Dy Si2 with orientation Dy Si2 (0001) ∥Si (111), corresponding to a near-perfect lattice match. The NW islands develop extended defects that correlate perfectly with individual step bunches at the buried interface, produced during growth. By contrast, islands grown on step-free substrates develop a broad, two-dimensional shape with no defects. We suggest that the NW shape results from the energy cost of extended defects, which inhibits growth across step edges.

AB - We report the growth of epitaxial Dy Si2 nanowires (NW) with a single orientation on miscut Si(111). Using high-resolution electron microscopy, we determine that the islands are hexagonal Dy Si2 with orientation Dy Si2 (0001) ∥Si (111), corresponding to a near-perfect lattice match. The NW islands develop extended defects that correlate perfectly with individual step bunches at the buried interface, produced during growth. By contrast, islands grown on step-free substrates develop a broad, two-dimensional shape with no defects. We suggest that the NW shape results from the energy cost of extended defects, which inhibits growth across step edges.

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Epitaxial Dy Si2 nanowire formation on stepped Si(111)

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