We report the growth of epitaxial Dy Si2 nanowires (NW) with a single orientation on miscut Si(111). Using high-resolution electron microscopy, we determine that the islands are hexagonal Dy Si2 with orientation Dy Si2 (0001) ∥Si (111), corresponding to a near-perfect lattice match. The NW islands develop extended defects that correlate perfectly with individual step bunches at the buried interface, produced during growth. By contrast, islands grown on step-free substrates develop a broad, two-dimensional shape with no defects. We suggest that the NW shape results from the energy cost of extended defects, which inhibits growth across step edges.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Apr 4 2005|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)