Epitaxial Cu contacts on semiconducting diamond

P. K. Baumann, T. P. Humphreys, R. J. Nemanich, K. Ishibashi, N. R. Parikh, L. M. Porter, R. F. Davis

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Abstract

In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χCu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of ΦB ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.

Original languageEnglish (US)
Pages (from-to)883-886
Number of pages4
JournalDiamond and Related Materials
Volume3
Issue number4-6
DOIs
StatePublished - Apr 1994
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Baumann, P. K., Humphreys, T. P., Nemanich, R. J., Ishibashi, K., Parikh, N. R., Porter, L. M., & Davis, R. F. (1994). Epitaxial Cu contacts on semiconducting diamond. Diamond and Related Materials, 3(4-6), 883-886. https://doi.org/10.1016/0925-9635(94)90292-5