Epitaxial Cu contacts on semiconducting diamond

P. K. Baumann, T. P. Humphreys, Robert Nemanich, K. Ishibashi, N. R. Parikh, L. M. Porter, R. F. Davis

Research output: Contribution to journalArticle

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Abstract

In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χCu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of ΦB ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.

Original languageEnglish (US)
Pages (from-to)883-886
Number of pages4
JournalDiamond and Related Materials
Volume3
Issue number4-6
DOIs
StatePublished - 1994
Externally publishedYes

Fingerprint

Semiconducting diamonds
diamonds
Diamond
Low energy electron diffraction
Rutherford backscattering spectroscopy
Substrates
Photoelectron spectroscopy
Ultraviolet spectroscopy
Electron beams
Atomic force microscopy
Diamonds
backscattering
Evaporation
adhesion
photoelectric emission
Adhesion
electron diffraction
evaporation
atomic force microscopy
electron beams

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Baumann, P. K., Humphreys, T. P., Nemanich, R., Ishibashi, K., Parikh, N. R., Porter, L. M., & Davis, R. F. (1994). Epitaxial Cu contacts on semiconducting diamond. Diamond and Related Materials, 3(4-6), 883-886. https://doi.org/10.1016/0925-9635(94)90292-5

Epitaxial Cu contacts on semiconducting diamond. / Baumann, P. K.; Humphreys, T. P.; Nemanich, Robert; Ishibashi, K.; Parikh, N. R.; Porter, L. M.; Davis, R. F.

In: Diamond and Related Materials, Vol. 3, No. 4-6, 1994, p. 883-886.

Research output: Contribution to journalArticle

Baumann, PK, Humphreys, TP, Nemanich, R, Ishibashi, K, Parikh, NR, Porter, LM & Davis, RF 1994, 'Epitaxial Cu contacts on semiconducting diamond', Diamond and Related Materials, vol. 3, no. 4-6, pp. 883-886. https://doi.org/10.1016/0925-9635(94)90292-5
Baumann PK, Humphreys TP, Nemanich R, Ishibashi K, Parikh NR, Porter LM et al. Epitaxial Cu contacts on semiconducting diamond. Diamond and Related Materials. 1994;3(4-6):883-886. https://doi.org/10.1016/0925-9635(94)90292-5
Baumann, P. K. ; Humphreys, T. P. ; Nemanich, Robert ; Ishibashi, K. ; Parikh, N. R. ; Porter, L. M. ; Davis, R. F. / Epitaxial Cu contacts on semiconducting diamond. In: Diamond and Related Materials. 1994 ; Vol. 3, No. 4-6. pp. 883-886.
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