In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in situ low-energy electron diffraction, the as-deposited layers were shown to be epitaxial, with χCu = 49%. In addition, the technique of atomic force microscopy has demonstrated island morphology, indicative of three-dimensional growth. Moreover, the Cu films displayed excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have shown rectifying characteristics. In addition, a Schottky barrier height of ΦB ≈ 1.1 eV has been determined from ultraviolet photoemission spectroscopy.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering