Environment about indium in Ga 1-xIn xN from In and Ga K-edge XAFS

C. H. Booth, F. Bridges, Z. Kvitky, Fernando Ponce, L. Romano

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In order to determine the effect of the In on the local nitrogen and gallium environment, we have collected both In and Ga K-edge XAFS data on films of Ga 1-xIn xN. The distribution of In in the GaN matrix was found to be random both by plotting the amplitude of the In-Ga/In peak vs. x and from more detailed fits, although small clusters of three or fewer In atoms cannot be ruled out. In-In and In-Ga atom pairs are of comparable bend length, increasing approximately linearly with concentration x. These atom-pair distances are between the Ga-Ga distance in GaN (3.18 angstroms) and the In-In distance in InN (3.52 angstroms). Ga edge data is consistent with this distribution, but further distortions make detailed fits more difficult.

Original languageEnglish (US)
Title of host publicationJournal De Physique. IV : JP
PublisherEditions de Physique
Volume7
Edition2
StatePublished - Apr 1997
Externally publishedYes
EventProceedings of the 1996 9th International Conference on X-Ray Absorption Fine Structure. Part 2 - Grenoble, Fr
Duration: Aug 26 1996Aug 30 1996

Other

OtherProceedings of the 1996 9th International Conference on X-Ray Absorption Fine Structure. Part 2
CityGrenoble, Fr
Period8/26/968/30/96

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F., & Romano, L. (1997). Environment about indium in Ga 1-xIn xN from In and Ga K-edge XAFS In Journal De Physique. IV : JP (2 ed., Vol. 7). Editions de Physique.