Environment about indium in G
            1-xIn
            xN from in Ga K-edge XAFS

C. H. Booth; F. Bridges; Z. Kvitky; Fernando Ponce; L. Romano

Environment about indium in G _1-xIn _xN from in Ga K-edge XAFS

C. H. Booth, F. Bridges, Z. Kvitky, Fernando Ponce, L. Romano

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In order to determine the effect of the In on the local nitrogen and gallium environment, we have collected both In and Ga K-edge XAFS data on films of Ga _1-xIn _xN. The distribution of In in the GaN matrix was found to be random both by plotting the amplitude of the In-Ga/In peak vs. x and from more detailed fits, although small clusters of three or fewer In atoms cannot be ruled out. In-In and In-Ga atom pairs are of comparable bond length, increasing approximately linearly with concentration x. These atom-pair distances are between the Ga-Ga distance in GaN (3.18 Å) and the In-In distance in InN (3.52 Å). Ga edge data is consistent with this distribution, but further distortions make detailed fits more difficult.

Original language	English (US)
Title of host publication	Journal De Physique. IV : JP
Volume	7
Edition	2 Part 2
State	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

Fingerprint Dive into the research topics of 'Environment about indium in G <sub>1-x</sub>In <sub>x</sub>N from in Ga K-edge XAFS'. Together they form a unique fingerprint.

Cite this

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F., & Romano, L. (1997). Environment about indium in G _1-xIn _xN from in Ga K-edge XAFS In Journal De Physique. IV : JP (2 Part 2 ed., Vol. 7)

@inbook{05954a9577e54b7d96c46c4b39a5abae,

title = "Environment about indium in G 1-xIn xN from in Ga K-edge XAFS ",

abstract = "GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In order to determine the effect of the In on the local nitrogen and gallium environment, we have collected both In and Ga K-edge XAFS data on films of Ga 1-xIn xN. The distribution of In in the GaN matrix was found to be random both by plotting the amplitude of the In-Ga/In peak vs. x and from more detailed fits, although small clusters of three or fewer In atoms cannot be ruled out. In-In and In-Ga atom pairs are of comparable bond length, increasing approximately linearly with concentration x. These atom-pair distances are between the Ga-Ga distance in GaN (3.18 {\AA}) and the In-In distance in InN (3.52 {\AA}). Ga edge data is consistent with this distribution, but further distortions make detailed fits more difficult. ",

author = "Booth, {C. H.} and F. Bridges and Z. Kvitky and Fernando Ponce and L. Romano",

year = "1997",

language = "English (US)",

volume = "7",

booktitle = "Journal De Physique. IV : JP",

edition = "2 Part 2",

}

TY - CHAP

T1 - Environment about indium in G 1-xIn xN from in Ga K-edge XAFS

AU - Booth, C. H.

AU - Bridges, F.

AU - Kvitky, Z.

AU - Ponce, Fernando

AU - Romano, L.

PY - 1997

Y1 - 1997

N2 - GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In order to determine the effect of the In on the local nitrogen and gallium environment, we have collected both In and Ga K-edge XAFS data on films of Ga 1-xIn xN. The distribution of In in the GaN matrix was found to be random both by plotting the amplitude of the In-Ga/In peak vs. x and from more detailed fits, although small clusters of three or fewer In atoms cannot be ruled out. In-In and In-Ga atom pairs are of comparable bond length, increasing approximately linearly with concentration x. These atom-pair distances are between the Ga-Ga distance in GaN (3.18 Å) and the In-In distance in InN (3.52 Å). Ga edge data is consistent with this distribution, but further distortions make detailed fits more difficult.

AB - GaN doped with various amounts of In can be used to make diodes with colors from blue to green. In order to determine the effect of the In on the local nitrogen and gallium environment, we have collected both In and Ga K-edge XAFS data on films of Ga 1-xIn xN. The distribution of In in the GaN matrix was found to be random both by plotting the amplitude of the In-Ga/In peak vs. x and from more detailed fits, although small clusters of three or fewer In atoms cannot be ruled out. In-In and In-Ga atom pairs are of comparable bond length, increasing approximately linearly with concentration x. These atom-pair distances are between the Ga-Ga distance in GaN (3.18 Å) and the In-In distance in InN (3.52 Å). Ga edge data is consistent with this distribution, but further distortions make detailed fits more difficult.

UR - http://www.scopus.com/inward/record.url?scp=33750645550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750645550&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:33750645550

VL - 7

BT - Journal De Physique. IV : JP

ER -