Abstract
Monte Carlo simulation has been shown to be an effective approach to the study of ultrafast carrier relaxation in semiconductor bulk materials and in microstructures. We will review the use of this methodology to study electron-electron and electron-hole interactions, non-equilibrium and confined phonons, and inter-subband relaxation in quantum wells. We will also discuss the presence of the collision-duration on the short-time scale, and will review the work of some other workers in the field. Finally, we discuss some of the limitations of the Monte Carlo technique.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | K.T. Tsen, H.R. Fetterman |
| Pages | 10-17 |
| Number of pages | 8 |
| Volume | 3277 |
| DOIs | |
| State | Published - 1998 |
| Event | Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
Other
| Other | Ultrafast Phenomena in Semiconductors II |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 1/28/98 → 1/29/98 |
Keywords
- Carrier-carrier interactions
- Many-body effects
- Monte Carlo
- Optical excitation
- Semiconductor device simulation
- Transport
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics