Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors

David K. Ferry, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monte Carlo simulation has been shown to be an effective approach to the study of ultrafast carrier relaxation in semiconductor bulk materials and in microstructures. We will review the use of this methodology to study electron-electron and electron-hole interactions, non-equilibrium and confined phonons, and inter-subband relaxation in quantum wells. We will also discuss the presence of the collision-duration on the short-time scale, and will review the work of some other workers in the field. Finally, we discuss some of the limitations of the Monte Carlo technique.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsK.T. Tsen, H.R. Fetterman
Pages10-17
Number of pages8
Volume3277
DOIs
StatePublished - 1998
EventUltrafast Phenomena in Semiconductors II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

Other

OtherUltrafast Phenomena in Semiconductors II
CountryUnited States
CitySan Jose, CA
Period1/28/981/29/98

Keywords

  • Carrier-carrier interactions
  • Many-body effects
  • Monte Carlo
  • Optical excitation
  • Semiconductor device simulation
  • Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Ferry, D. K., & Goodnick, S. (1998). Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors. In K. T. Tsen, & H. R. Fetterman (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3277, pp. 10-17) https://doi.org/10.1117/12.306149