Ensemble Monte Carlo simulation of Raman scattering in GaAs

Selim E. Guencer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the Γ conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 × 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDavid K. Ferry, Henry M. van Driel
Pages182-189
Number of pages8
Volume2142
StatePublished - 1994
Externally publishedYes
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: Jan 27 1994Jan 28 1994

Other

OtherUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA
Period1/27/941/28/94

Fingerprint

Raman scattering
Raman spectra
Electrons
electrons
Hot electrons
simulation
electron distribution
Conduction bands
hot electrons
Spatial distribution
lasers
Distribution functions
Monte Carlo method
Laser pulses
spatial distribution
conduction bands
Monte Carlo methods
distribution functions
Electric fields
electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Guencer, S. E., & Ferry, D. K. (1994). Ensemble Monte Carlo simulation of Raman scattering in GaAs. In D. K. Ferry, & H. M. van Driel (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2142, pp. 182-189)

Ensemble Monte Carlo simulation of Raman scattering in GaAs. / Guencer, Selim E.; Ferry, David K.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / David K. Ferry; Henry M. van Driel. Vol. 2142 1994. p. 182-189.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guencer, SE & Ferry, DK 1994, Ensemble Monte Carlo simulation of Raman scattering in GaAs. in DK Ferry & HM van Driel (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 2142, pp. 182-189, Ultrafast Phenomena in Semiconductors, Los Angeles, CA, USA, 1/27/94.
Guencer SE, Ferry DK. Ensemble Monte Carlo simulation of Raman scattering in GaAs. In Ferry DK, van Driel HM, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2142. 1994. p. 182-189
Guencer, Selim E. ; Ferry, David K. / Ensemble Monte Carlo simulation of Raman scattering in GaAs. Proceedings of SPIE - The International Society for Optical Engineering. editor / David K. Ferry ; Henry M. van Driel. Vol. 2142 1994. pp. 182-189
@inproceedings{f8f03d2a67fd42d787a65c0d6a88f545,
title = "Ensemble Monte Carlo simulation of Raman scattering in GaAs",
abstract = "A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the Γ conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 × 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.",
author = "Guencer, {Selim E.} and Ferry, {David K.}",
year = "1994",
language = "English (US)",
isbn = "0819414379",
volume = "2142",
pages = "182--189",
editor = "Ferry, {David K.} and {van Driel}, {Henry M.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Ensemble Monte Carlo simulation of Raman scattering in GaAs

AU - Guencer, Selim E.

AU - Ferry, David K.

PY - 1994

Y1 - 1994

N2 - A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the Γ conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 × 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.

AB - A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the Γ conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 × 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.

UR - http://www.scopus.com/inward/record.url?scp=0028734579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028734579&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028734579

SN - 0819414379

SN - 9780819414373

VL - 2142

SP - 182

EP - 189

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Ferry, David K.

A2 - van Driel, Henry M.

ER -