Ensemble Monte Carlo simulation of Raman scattering in GaAs

Selim E. Guencer, David K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on Raman scattering of light from the electrons to measure the drift velocity of electrons in GaAs at high electric fields. It is observed that the simulation agrees with the experimental results, however, the measured velocity is actually averaged over the time evolution of the spatial distribution of the Raman probe in the sample and underestimates the average velocity of electrons over the pulselength excited in the Γ conduction band of a 1.909 eV laser pulse, which is calculated to be in the order of 8.5 × 107 cm/sec for fields of 25 kV/cm at a temperature of 77 K.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsDavid K. Ferry, Henry M. van Driel
Pages182-189
Number of pages8
Volume2142
Publication statusPublished - 1994
Externally publishedYes
EventUltrafast Phenomena in Semiconductors - Los Angeles, CA, USA
Duration: Jan 27 1994Jan 28 1994

Other

OtherUltrafast Phenomena in Semiconductors
CityLos Angeles, CA, USA
Period1/27/941/28/94

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Guencer, S. E., & Ferry, D. K. (1994). Ensemble Monte Carlo simulation of Raman scattering in GaAs. In D. K. Ferry, & H. M. van Driel (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2142, pp. 182-189)