Ensemble Monte Carlo simulation of raman scattering in an Al xGa1-xAs system to determine the relative strength of the polar optical modes

L. Shifren, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Monte Carlo simulation is used to study Raman scattering and the relative strengths of the polar optical modes in an AlxGa1-xAs system. The dual polar optical modes in the system are incorporated by including two polar optical scattering events. All parameters in the simulation are x dependent to account for the changing band structure. The electron-electron interaction is introduced via the coupling of a molecular dynamics loop. The full q-space phonon distribution is calculated for each time step and this time dependent distribution is then used to extract the temporal Raman signal which is then used to calculate the relative strengths of the polar optical modes. It is found that the relative strength of the polar optical modes is strongly dependent on the electron concentration and the laser pulse energy.

Original languageEnglish (US)
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages449-452
Number of pages4
StatePublished - 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: Mar 27 2000Mar 29 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Other

Other2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Country/TerritoryUnited States
CitySan Diego, CA
Period3/27/003/29/00

Keywords

  • AlGaAs
  • Monte Carlo
  • Optical Phonons

ASJC Scopus subject areas

  • General Engineering

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