Ensemble Monte Carlo simulation of intervalley scattering in AlxGa1-xAs

Selim E. Guer, David K. Ferry

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

An ensemble Monte Carlo simulation of the femtosecond response of photoexcited electrons in indirect-gap AlxGa1-xAs is performed. The time evolution of electron populations in the conduction-band valleys is studied. By comparing with recent femtosecond infrared-absorption experiments, a value for the L-X intervalley deformation potential was derived through parameter fitting. The effect of binary phonon modes due to the alloy structure of the semiconductor is incorporated into the simulation of both the ultrafast scattering processes and the indirect photogeneration process. The value found for the L-X intervalley deformation potential, DXL=1.7±0.5×108 eV/cm, can be assumed as a lower bound for the deformation potential in GaAs.

Original languageEnglish (US)
Pages (from-to)15309-15316
Number of pages8
JournalPhysical Review B
Volume46
Issue number23
DOIs
StatePublished - 1992

Fingerprint

Scattering
scattering
Electrons
simulation
Infrared absorption
Conduction bands
infrared absorption
valleys
conduction bands
electrons
Semiconductor materials
Monte Carlo simulation
Experiments
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Ensemble Monte Carlo simulation of intervalley scattering in AlxGa1-xAs. / Guer, Selim E.; Ferry, David K.

In: Physical Review B, Vol. 46, No. 23, 1992, p. 15309-15316.

Research output: Contribution to journalArticle

Guer, Selim E. ; Ferry, David K. / Ensemble Monte Carlo simulation of intervalley scattering in AlxGa1-xAs. In: Physical Review B. 1992 ; Vol. 46, No. 23. pp. 15309-15316.
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