Enhancing interfacial charge transfer in a WO₃/BiVO₄photoanode heterojunction through gallium and tungsten co-doping and a sulfur modified Bi₂O₃interfacial layer

Engineering & Materials Science

• Gallium 100%
• Heterojunctions 91%
• Charge transfer 90%
• Doping (additives) 78%
• Tungsten 76%
• Charge carriers 71%
• Photocurrents 68%
• Sulfur 68%
• Depth profiling 38%
• Photoluminescence 38%
• Spectroscopic analysis 37%
• Absorption spectroscopy 35%
• Light absorption 35%
• Secondary ion mass spectrometry 35%
• Carrier concentration 33%
• X ray photoelectron spectroscopy 28%
• Energy dispersive spectroscopy 24%
• Catalysts 19%
• Lighting 18%
• Water 12%

Chemical Compounds

• Tungsten 64%
• Charge Transfer 49%
• Charge Carrier 45%
• Photocurrent 43%
• Depth Profiling 29%
• Time-of-Flight Secondary Ion Mass Spectrometry 28%
• Co-Catalyst 25%
• Charge Separation 23%
• Spectroscopic Analysis 23%
• Absorption Spectroscopy 22%
• Illumination 20%
• Photoluminescence 18%