Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra

Research output: Contribution to journalArticle

104 Scopus citations


Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.

Original languageEnglish (US)
Pages (from-to)543-545
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - Jun 2008
Externally publishedYes



  • AlGaN/GaN
  • Current aperture vertical electron transistor (CAVET)
  • F plasma treatment
  • Mg implanted
  • Normally off
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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