Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.

Original languageEnglish (US)
Pages (from-to)543-545
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
StatePublished - Jun 2008
Externally publishedYes

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Transconductance
Threshold voltage
Transistors
Ions
Plasmas
Electrons
Drain current
Etching
aluminum gallium nitride

Keywords

  • AlGaN/GaN
  • Current aperture vertical electron transistor (CAVET)
  • F plasma treatment
  • Mg implanted
  • Normally off
  • Threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer. / Chowdhury, Srabanti; Swenson, Brian L.; Mishra, Umesh K.

In: IEEE Electron Device Letters, Vol. 29, No. 6, 06.2008, p. 543-545.

Research output: Contribution to journalArticle

Chowdhury, Srabanti ; Swenson, Brian L. ; Mishra, Umesh K. / Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 6. pp. 543-545.
@article{fd36df226c1c4d66871f4b0440896f37,
title = "Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer",
abstract = "Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.",
keywords = "AlGaN/GaN, Current aperture vertical electron transistor (CAVET), F plasma treatment, Mg implanted, Normally off, Threshold voltage",
author = "Srabanti Chowdhury and Swenson, {Brian L.} and Mishra, {Umesh K.}",
year = "2008",
month = "6",
doi = "10.1109/LED.2008.922982",
language = "English (US)",
volume = "29",
pages = "543--545",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

AU - Chowdhury, Srabanti

AU - Swenson, Brian L.

AU - Mishra, Umesh K.

PY - 2008/6

Y1 - 2008/6

N2 - Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.

AB - Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.

KW - AlGaN/GaN

KW - Current aperture vertical electron transistor (CAVET)

KW - F plasma treatment

KW - Mg implanted

KW - Normally off

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=44849087614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44849087614&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.922982

DO - 10.1109/LED.2008.922982

M3 - Article

VL - 29

SP - 543

EP - 545

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

ER -