Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

Srabanti Chowdhury; Brian L. Swenson; Umesh K. Mishra

doi:10.1109/LED.2008.922982

Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra

Research output: Contribution to journal › Article › peer-review

152 Scopus citations

Abstract

Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 10³ A/cm² (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (g_m) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF₄ plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in g_m by CF₄ plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the g_m varied directly with the time of exposure. There was no significant dispersion in these devices.

Original language	English (US)
Pages (from-to)	543-545
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/LED.2008.922982
State	Published - Jun 2008
Externally published	Yes

Keywords

AlGaN/GaN
Current aperture vertical electron transistor (CAVET)
F plasma treatment
Mg implanted
Normally off
Threshold voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2008.922982

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title = "Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer",

abstract = "Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.",

keywords = "AlGaN/GaN, Current aperture vertical electron transistor (CAVET), F plasma treatment, Mg implanted, Normally off, Threshold voltage",

author = "Srabanti Chowdhury and Swenson, {Brian L.} and Mishra, {Umesh K.}",

note = "Funding Information: Manuscript received December 31, 2007; revised March 13, 2008. This work was supported by the Toyota Motor Corporation. The review of this letter was arranged by Editor J. del Alamo. The authors are with the Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-9560 USA (e-mail: srabanti@ece.ucsb.edu). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.922982",

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AU - Mishra, Umesh K.

N1 - Funding Information: Manuscript received December 31, 2007; revised March 13, 2008. This work was supported by the Toyota Motor Corporation. The review of this letter was arranged by Editor J. del Alamo. The authors are with the Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-9560 USA (e-mail: srabanti@ece.ucsb.edu). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2008.922982

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N2 - Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.

AB - Current aperture vertical electron transistor (CAVET) was successfully demonstrated by using Mg-implanted GaN as a current blocking layer for nonalloyed source contacts. A maximum source-drain current of 5.6 × 103 A/cm2 (corresponding to 0.22 A/mm of source) and an extrinsic transconductance (gm) of 54 mS/mm of source were achieved. Threshold voltage as high as 0.6 V was realized by CF4 plasma exposure for 10 min, increasing the transconductance of the device to 140 mS/mm of source. Thus, a normally off CAVET was demonstrated for the first time. The increase in gm by CF4 plasma exposure for a given bias was due to etching of the AlGaN barrier. The shift of threshold voltage and the gm varied directly with the time of exposure. There was no significant dispersion in these devices.

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Enhancement and depletion mode AlGaN/GaN CAVET with Mg-ion-implanted GaN as current blocking layer

Abstract

Keywords

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