Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers

C. L. Hinkle, C. Fulton, Robert Nemanich, G. Lucovsky

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original languageEnglish (US)
Pages (from-to)240-245
Number of pages6
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
StatePublished - Jul 15 2004
Externally publishedYes

Fingerprint

Gate dielectrics
Conduction bands
Rare Earth Metals
Electron tunneling
Oxides
Rare earths
Transition metals
conduction bands
Permittivity
electron tunneling
optical measurement
proportion
rare earth elements
transition metals
permittivity
oxides
energy
estimates
products

Keywords

  • Direct tunneling
  • High-K dielectrics
  • Stacked gate dielectrics
  • Tunneling mass-conduction band offset energy product

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers. / Hinkle, C. L.; Fulton, C.; Nemanich, Robert; Lucovsky, G.

In: Applied Surface Science, Vol. 234, No. 1-4, 15.07.2004, p. 240-245.

Research output: Contribution to journalArticle

@article{d65e9a67846e46f1b809104bddbab865,
title = "Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers",
abstract = "There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.",
keywords = "Direct tunneling, High-K dielectrics, Stacked gate dielectrics, Tunneling mass-conduction band offset energy product",
author = "Hinkle, {C. L.} and C. Fulton and Robert Nemanich and G. Lucovsky",
year = "2004",
month = "7",
day = "15",
doi = "10.1016/j.apsusc.2004.05.076",
language = "English (US)",
volume = "234",
pages = "240--245",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO2 layers

AU - Hinkle, C. L.

AU - Fulton, C.

AU - Nemanich, Robert

AU - Lucovsky, G.

PY - 2004/7/15

Y1 - 2004/7/15

N2 - There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

AB - There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

KW - Direct tunneling

KW - High-K dielectrics

KW - Stacked gate dielectrics

KW - Tunneling mass-conduction band offset energy product

UR - http://www.scopus.com/inward/record.url?scp=3342953879&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3342953879&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.05.076

DO - 10.1016/j.apsusc.2004.05.076

M3 - Article

VL - 234

SP - 240

EP - 245

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -