Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 layers sandwiched between thicker SiO 2 layers

C. L. Hinkle, C. Fulton, R. J. Nemanich, G. Lucovsky

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, E B , and the effective electron tunneling mass, m eff , which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original languageEnglish (US)
Pages (from-to)240-245
Number of pages6
JournalApplied Surface Science
Volume234
Issue number1-4
DOIs
StatePublished - Jul 15 2004
Externally publishedYes
EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
Duration: Sep 15 2003Sep 19 2003

    Fingerprint

Keywords

  • Direct tunneling
  • High-K dielectrics
  • Stacked gate dielectrics
  • Tunneling mass-conduction band offset energy product

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this