Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO 2 (ZrO2) layers sandwiched between thicker SiO2 layers

C. L. Hinkle, C. Fulton, R. J. Nemanich, G. Lucovsky

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases in physical thickness proportional to K, and therefore would significantly reduce direct tunneling. However, increases in k to values of 15-25 in transition metal and rare earth oxides are generally accompanied by decreases in the conduction band offset energy with respect to Si, EB, and the effective electron tunneling mass, meff, which mitigate gains from increased thickness. A novel technique, based on stacked dielectrics, is used to obtain the tunneling mass-conduction band offset energy product. When combined with optical measurements of tunneling barriers, this yields direct estimates of the tunneling mass.

Original languageEnglish (US)
Pages (from-to)1185-1189
Number of pages5
JournalSurface Science
Volume566-568
Issue number1-3 PART 2
DOIs
StatePublished - Sep 20 2004
Externally publishedYes
EventProceedings of the 22nd European Conference on Surface Science - Prague, Czech Republic
Duration: Sep 7 2003Sep 12 2003

Keywords

  • Dielectric phenomena
  • Metal-oxide-semiconductor (MOS) structures
  • Surface electronic phenomena (work function, surface potential, surface states, etc.)
  • Tunneling

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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