Enhanced rectification, transport property and photocurrent generation of multilayer ReSe₂/MoS₂ p–n heterojunctions

Engineering & Materials Science

• Photocurrents 100%
• Heterojunctions 89%
• Transport properties 87%
• Multilayers 66%
• Dangling bonds 62%
• Electron mobility 54%
• Quantum efficiency 53%
• Electronic properties 53%
• Van der Waals forces 51%
• Photodetectors 44%
• Optoelectronic devices 40%
• Field effect transistors 36%
• Diodes 31%

Chemical Compounds

• Dangling Bond 91%
• Electron Mobility 82%
• Nanoflake 82%
• Van Der Waals Force 69%
• Field Effect 68%
• Transport Property 64%
• Photocurrent 63%
• Optoelectronics 62%
• Multilayer 61%
• Electronic Property 56%
• Hexagonal Space Group 54%

Physics & Astronomy

• rectification 75%
• photocurrents 63%
• heterojunctions 60%
• transport properties 54%
• heterojunction devices 48%
• Van der Waals forces 41%
• electron mobility 35%
• high current 31%
• photometers 30%
• quantum efficiency 30%
• field effect transistors 27%
• diodes 26%
• coefficients 18%
• electronics 17%