Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions

Xiaoting Wang, Le Huang, Yuting Peng, Nengjie Huo, Kedi Wu, Congxin Xia, Zhongming Wei, Sefaattin Tongay, Jingbo Li

Research output: Contribution to journalArticle

73 Scopus citations

Abstract

Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector. [Figure not available: see fulltext.]

Original languageEnglish (US)
Pages (from-to)507-516
Number of pages10
JournalNano Research
Volume9
Issue number2
DOIs
StatePublished - Feb 1 2016

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Keywords

  • optoelectronic properties
  • rectification
  • ReSe/MoS
  • van der Waals heterojunction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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