Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications

J. D. Gallagher, C. L. Senaratne, C. Xu, P. M. Wallace, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes Ge1-ySny (y = 0.0-0.11) light emitting diodes (LEDs) with a broad range of compositions extending from pure Ge to Sn concentrations where the alloy becomes a direct gap material (y = 0.09) and beyond. The devices are grown on Si(100) platforms using ultra-low temperature depositions of highly reactive Ge and Sn hydrides. The device fabrication adopts two new photodiode designs. The first employs n-Ge/i-Ge1-ySny/p-Ge1- y'Sny' hetero-structure stacks possessing a single defected interface between the n-Ge and i-Ge1-ySny layers. The second consists of a homo-structure n-Ge1-ySny/i-Ge1-ySny/p-Ge1-ySny design. The devices show low dark currents and the electroluminescence (EL) spectra show concomitant redshifts of the peak emission position and intensity increase near direct gap Sn compositions. The EL of the homo-structure design displays a large efficiency enhancement relative to the hetero-structure devices. The fabrication of ternary Ge1-x-ySixSny diodes with ~9% Sn and 3-9% Si contents is also discussed.

Original languageEnglish (US)
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages147-156
Number of pages10
Volume69
Edition14
ISBN (Print)9781607685395
DOIs
StatePublished - 2015
EventSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting - Phoenix, United States
Duration: Oct 11 2015Oct 15 2015

Other

OtherSymposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period10/11/1510/15/15

Fingerprint

Photonics
Light emitting diodes
Electroluminescence
Fabrication
Dark currents
Photodiodes
Chemical analysis
Hydrides
Diodes
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Gallagher, J. D., Senaratne, C. L., Xu, C., Wallace, P. M., Menendez, J., & Kouvetakis, J. (2015). Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications. In ECS Transactions (14 ed., Vol. 69, pp. 147-156). Electrochemical Society Inc.. https://doi.org/10.1149/06914.0147ecst

Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications. / Gallagher, J. D.; Senaratne, C. L.; Xu, C.; Wallace, P. M.; Menendez, Jose; Kouvetakis, John.

ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. p. 147-156.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallagher, JD, Senaratne, CL, Xu, C, Wallace, PM, Menendez, J & Kouvetakis, J 2015, Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications. in ECS Transactions. 14 edn, vol. 69, Electrochemical Society Inc., pp. 147-156, Symposium on State-of-the-Art Program on Compound Semiconductors 58, SOTAPOCS 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06914.0147ecst
Gallagher JD, Senaratne CL, Xu C, Wallace PM, Menendez J, Kouvetakis J. Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications. In ECS Transactions. 14 ed. Vol. 69. Electrochemical Society Inc. 2015. p. 147-156 https://doi.org/10.1149/06914.0147ecst
Gallagher, J. D. ; Senaratne, C. L. ; Xu, C. ; Wallace, P. M. ; Menendez, Jose ; Kouvetakis, John. / Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications. ECS Transactions. Vol. 69 14. ed. Electrochemical Society Inc., 2015. pp. 147-156
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