We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering