Abstract

We report the effect of anneal time on the performance and elevated temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The sub-threshold swing and off-current are reduced by a factor of 2.5 and by almost two orders of magnitude for 48 h annealed TFTs, respectively when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant elevated temperature stability when compared to the unannealed TFTs. The sub-threshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. For all the TFTs at positive gate bias threshold voltage shift (ΔVt) follow a power law-dependence with time indicating state-creation mechanism. Life-time values for the 48 h annealed TFT shows improvement by a factor of 3 when compared to unannealed TFTs (when ΔVt is extrapolated to 10 V). The stability at elevated temperatures and better performance of long annealed TFTs is attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 10, TFT 10
Pages57-64
Number of pages8
Edition5
DOIs
StatePublished - Dec 1 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Indluru, A., & Alford, T. (2010). Enhanced performance and thermal stability of a-Si:H TFTs. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 57-64). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481219