Abstract

We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume13
Issue number12
DOIs
StatePublished - 2010

Fingerprint

Thin film transistors
Thermodynamic stability
thermal stability
transistors
thin films
Temperature
temperature
Electron mobility
Amorphous silicon
electron mobility
amorphous silicon
Hysteresis
hysteresis
insulators

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Enhanced performance and thermal stability of a-Si : H TFTs. / Indluru, A.; Alford, Terry.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 12, 2010.

Research output: Contribution to journalArticle

@article{a13a97280dce4499b0f801eed72745c8,
title = "Enhanced performance and thermal stability of a-Si: H TFTs",
abstract = "We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.",
author = "A. Indluru and Terry Alford",
year = "2010",
doi = "10.1149/1.3501989",
language = "English (US)",
volume = "13",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

TY - JOUR

T1 - Enhanced performance and thermal stability of a-Si

T2 - H TFTs

AU - Indluru, A.

AU - Alford, Terry

PY - 2010

Y1 - 2010

N2 - We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

AB - We report the effect of anneal time on the performance and temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The subthreshold swing and off-current are reduced by a factor of 2.5 and by almost 2 orders of magnitude for 48 h annealed TFTs, respectively, when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant temperature stability when compared to the unannealed TFTs. The subthreshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. The stability at elevated temperatures and better performance of long annealed TFTs are attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

UR - http://www.scopus.com/inward/record.url?scp=77958491327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958491327&partnerID=8YFLogxK

U2 - 10.1149/1.3501989

DO - 10.1149/1.3501989

M3 - Article

AN - SCOPUS:77958491327

VL - 13

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 12

ER -