Abstract

We report the effect of anneal time on the performance and elevated temperature stability of hydrogenated amorphous silicon (a-Si:H) thin-film-transistors (TFTs). The sub-threshold swing and off-current are reduced by a factor of 2.5 and by almost two orders of magnitude for 48 h annealed TFTs, respectively when compared to unannealed TFTs. Furthermore, long annealed TFTs show significant elevated temperature stability when compared to the unannealed TFTs. The sub-threshold swing, hysteresis, electron mobility, and off-current are stable even at elevated temperatures. For all the TFTs at positive gate bias threshold voltage shift (ΔVt) follow a power law-dependence with time indicating state-creation mechanism. Life-time values for the 48 h annealed TFT shows improvement by a factor of 3 when compared to unannealed TFTs (when ΔVt is extrapolated to 10 V). The stability at elevated temperatures and better performance of long annealed TFTs is attributed to improved a-Si:H channel and/or the a-Si:H/insulator interface.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages57-64
Number of pages8
Volume33
Edition5
DOIs
StatePublished - 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

Fingerprint

Thin film transistors
Thermodynamic stability
Temperature
Electron mobility
Bias voltage
Amorphous silicon
Threshold voltage
Hysteresis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Indluru, A., & Alford, T. (2010). Enhanced performance and thermal stability of a-Si: H TFTs. In ECS Transactions (5 ed., Vol. 33, pp. 57-64) https://doi.org/10.1149/1.3481219

Enhanced performance and thermal stability of a-Si : H TFTs. / Indluru, A.; Alford, Terry.

ECS Transactions. Vol. 33 5. ed. 2010. p. 57-64.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Indluru, A & Alford, T 2010, Enhanced performance and thermal stability of a-Si: H TFTs. in ECS Transactions. 5 edn, vol. 33, pp. 57-64, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 10/11/10. https://doi.org/10.1149/1.3481219
Indluru, A. ; Alford, Terry. / Enhanced performance and thermal stability of a-Si : H TFTs. ECS Transactions. Vol. 33 5. ed. 2010. pp. 57-64
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