Enhanced iron gettering by short, optimized low-temperature annealing after phosphorus emitter diffusion for industrial silicon solar cell processing

Jasmin Hofstetter, Jean François Lelièvre, David P. Fenning, Mariana I. Bertoni, Tonio Buonassisi, Antonio Luque, Carlos del Cañizo

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The introduction of a low-temperature (LT) tail after P emitter diffusion was shown to lead to considerable improvements in electron lifetime and solar cell performance by different researchers. So far, the drawback of the investigated extended gettering treatments has been the lack of knowledge about optimum annealing times and temperatures and the important increase in processing time. In this manuscript, we calculate optimum annealing temperatures of Fe-contaminated Si wafers for different annealing durations. Subsequently, it is shown theoretically and experimentally that a relatively short LT tail of 15 min can lead to a significant reduction of interstitial Fe and an increase in electron lifetime. Finally, we calculate the potential improvement of solar cell efficiency when such a short-tail extended P diffusion gettering is included in an industrial fabrication process.

Original languageEnglish (US)
Pages (from-to)759-762
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number3
DOIs
StatePublished - Mar 1 2011
Externally publishedYes

Keywords

  • Defect engineering
  • P gettering
  • Silicon solar cells
  • Simulation

ASJC Scopus subject areas

  • Condensed Matter Physics

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