Abstract

In the present study, thin films of binary Ag-Cu alloys with different Cu content were prepared by a cosputtering technique and then annealed by microwave heating. The metallographic and electrical properties of the thin films were observed experimentally. It was found that the electrical performance of Ag-Cu thin films enhanced after microwave processing when compared to vacuum annealing. Based on the fact that Cu has a low solubility in Ag, it was chosen as the alloying element. The low solubility favored segregation of Cu at the surface and grain boundaries. This prevented Ag grain boundary diffusion and agglomeration. The as-deposited thin films were more resistive when compared to the microwave processed films. Comparison of the two postdeposition annealing techniques, microwave and vacuum, showed that microwave annealing is a clean, faster, and efficient process that can improve the electrical performance of Ag-Cu thin films. Results from this investigation demonstrated that microwave annealing is a suitable replacement of more expensive manufacturing techniques currently used in the field of interconnects technology.

Original languageEnglish (US)
Article number011204
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number1
DOIs
StatePublished - 2013

Fingerprint

Microwaves
microwaves
Thin films
Annealing
thin films
Processing
annealing
Grain boundaries
Temperature
Solubility
Vacuum
solubility
grain boundaries
Microwave heating
Alloying elements
vacuum
agglomeration
Electric properties
Agglomeration
alloying

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Enhanced electrical performance of Ag-Cu thin films after low temperature microwave processing. / Das, Sayantan; Vemuri, Rajitha N P; Alford, Terry.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, No. 1, 011204, 2013.

Research output: Contribution to journalArticle

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