Abstract
Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu 2O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000 μm 2 in area, or ∼ 100 μm in linear dimension, while the film is only 1-5 μm thick. The enhanced grain size is explained by the effect of over-potential for the Cu 2+/Cu + redox couple on nucleation density of Cu 2O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu 2O displays a high resistivity of 100 MΩcm. Bromine doping in Cu 2O significantly reduces the resistivity to as low as 42 Ωcm after vacuum annealing. Br-doped Cu 2O shows n-type behavior.
Original language | English (US) |
---|---|
Pages (from-to) | 5239-5244 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 16 |
DOIs | |
State | Published - Jun 1 2012 |
Externally published | Yes |
Keywords
- Crystal morphology
- Cuprous oxide
- Doping
- Electrochemical deposition
- Nucleation
- Scanning electron microscopy
- X-ray diffraction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry