Enhanced crystal grain size by bromine doping in electrodeposited Cu 2O

Kunhee Han; Feng Kang; Xiaofei Han; Meng Tao

doi:10.1016/j.tsf.2012.03.094

Enhanced crystal grain size by bromine doping in electrodeposited Cu ₂O

Kunhee Han, Feng Kang, Xiaofei Han, Meng Tao

Research output: Contribution to journal › Article

11 Scopus citations

Abstract

Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu ₂O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000 μm ² in area, or ∼ 100 μm in linear dimension, while the film is only 1-5 μm thick. The enhanced grain size is explained by the effect of over-potential for the Cu ²⁺/Cu ⁺ redox couple on nucleation density of Cu ₂O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu ₂O displays a high resistivity of 100 MΩcm. Bromine doping in Cu ₂O significantly reduces the resistivity to as low as 42 Ωcm after vacuum annealing. Br-doped Cu ₂O shows n-type behavior.

Original language	English (US)
Pages (from-to)	5239-5244
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2012.03.094
State	Published - Jun 1 2012
Externally published	Yes

Keywords

Crystal morphology
Cuprous oxide
Doping
Electrochemical deposition
Nucleation
Scanning electron microscopy
X-ray diffraction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Han, K., Kang, F., Han, X., & Tao, M. (2012). Enhanced crystal grain size by bromine doping in electrodeposited Cu ₂O. Thin Solid Films, 520(16), 5239-5244. https://doi.org/10.1016/j.tsf.2012.03.094

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title = "Enhanced crystal grain size by bromine doping in electrodeposited Cu 2O",

abstract = "Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu 2O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000 μm 2 in area, or ∼ 100 μm in linear dimension, while the film is only 1-5 μm thick. The enhanced grain size is explained by the effect of over-potential for the Cu 2+/Cu + redox couple on nucleation density of Cu 2O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu 2O displays a high resistivity of 100 MΩcm. Bromine doping in Cu 2O significantly reduces the resistivity to as low as 42 Ωcm after vacuum annealing. Br-doped Cu 2O shows n-type behavior.",

keywords = "Crystal morphology, Cuprous oxide, Doping, Electrochemical deposition, Nucleation, Scanning electron microscopy, X-ray diffraction",

author = "Kunhee Han and Feng Kang and Xiaofei Han and Meng Tao",

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doi = "10.1016/j.tsf.2012.03.094",

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AU - Han, Kunhee

AU - Kang, Feng

AU - Han, Xiaofei

AU - Tao, Meng

PY - 2012/6/1

Y1 - 2012/6/1

N2 - Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu 2O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000 μm 2 in area, or ∼ 100 μm in linear dimension, while the film is only 1-5 μm thick. The enhanced grain size is explained by the effect of over-potential for the Cu 2+/Cu + redox couple on nucleation density of Cu 2O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu 2O displays a high resistivity of 100 MΩcm. Bromine doping in Cu 2O significantly reduces the resistivity to as low as 42 Ωcm after vacuum annealing. Br-doped Cu 2O shows n-type behavior.

AB - Extremely large crystal grains are obtained by bromine doping in electrodeposited Cu 2O on indium tin oxide (ITO) substrate through an acetate bath. The grains are as large as 10,000 μm 2 in area, or ∼ 100 μm in linear dimension, while the film is only 1-5 μm thick. The enhanced grain size is explained by the effect of over-potential for the Cu 2+/Cu + redox couple on nucleation density of Cu 2O on ITO substrate. The over-potential is a function of several deposition conditions including solution pH, deposition potential, deposition temperature, bromine precursor concentration, and copper precursor concentration. In addition, undoped Cu 2O displays a high resistivity of 100 MΩcm. Bromine doping in Cu 2O significantly reduces the resistivity to as low as 42 Ωcm after vacuum annealing. Br-doped Cu 2O shows n-type behavior.

KW - Crystal morphology

KW - Cuprous oxide

KW - Doping

KW - Electrochemical deposition

KW - Nucleation

KW - Scanning electron microscopy

KW - X-ray diffraction

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