Engineering issues in high-frequency RSFQ circuits

T. Van Duzer, L. Zheng, X. Meng, C. Loyo, S. R. Whiteley, L. Yu, Nathan Newman, J. M. Rowell, N. Yoshikawa

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

This paper reports progress on several projects that contribute to advancing the state of the art of rapid single flux quantum (RSFQ) logic. The first project is aimed to demonstrate, with true digital testing, the performance of RSFQ circuits of significant size and importance at a frequency that challenges the best semiconductor circuits, with only a miniscule fraction of their power dissipation. The second is a demonstration of an internally shunted SNS junction that has a high IcRn product and is intended as a drop-in replacement for the now-common resistively shunted tunnel junction; the advantage of this device is reduction of size, minimization of parasitic inductances, as well as high IcRn product for higher frequency operation. In the third project, we are trying to break the memory bottleneck that has long plagued superconductor digital electronics by using a hybrid of Josephson and CMOS technologies.

Original languageEnglish (US)
Pages (from-to)1-6
Number of pages6
JournalPhysica C: Superconductivity and its applications
Volume372-376
Issue numberPART 1
DOIs
StatePublished - Aug 1 2002

Keywords

  • RSFQ
  • Superconductor memory
  • Superconductor/normal conductor/superconductor device

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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