TY - JOUR
T1 - Engineering issues in high-frequency RSFQ circuits
AU - Van Duzer, T.
AU - Zheng, L.
AU - Meng, X.
AU - Loyo, C.
AU - Whiteley, S. R.
AU - Yu, L.
AU - Newman, Nathan
AU - Rowell, J. M.
AU - Yoshikawa, N.
N1 - Funding Information:
The authors would like to express appreciation for support by ONR under grant nos. N00014-00-1-0003 at UCB and N00014-96-1-1002/N00014-00-1-0783 at NWU/ASU and to JPL under grant no. 1222266 at UCB. The research at Yokohama National University is supported by MEXT under the Grant-in-Aid for Scientific Research.
PY - 2002/8
Y1 - 2002/8
N2 - This paper reports progress on several projects that contribute to advancing the state of the art of rapid single flux quantum (RSFQ) logic. The first project is aimed to demonstrate, with true digital testing, the performance of RSFQ circuits of significant size and importance at a frequency that challenges the best semiconductor circuits, with only a miniscule fraction of their power dissipation. The second is a demonstration of an internally shunted SNS junction that has a high IcRn product and is intended as a drop-in replacement for the now-common resistively shunted tunnel junction; the advantage of this device is reduction of size, minimization of parasitic inductances, as well as high IcRn product for higher frequency operation. In the third project, we are trying to break the memory bottleneck that has long plagued superconductor digital electronics by using a hybrid of Josephson and CMOS technologies.
AB - This paper reports progress on several projects that contribute to advancing the state of the art of rapid single flux quantum (RSFQ) logic. The first project is aimed to demonstrate, with true digital testing, the performance of RSFQ circuits of significant size and importance at a frequency that challenges the best semiconductor circuits, with only a miniscule fraction of their power dissipation. The second is a demonstration of an internally shunted SNS junction that has a high IcRn product and is intended as a drop-in replacement for the now-common resistively shunted tunnel junction; the advantage of this device is reduction of size, minimization of parasitic inductances, as well as high IcRn product for higher frequency operation. In the third project, we are trying to break the memory bottleneck that has long plagued superconductor digital electronics by using a hybrid of Josephson and CMOS technologies.
KW - RSFQ
KW - Superconductor memory
KW - Superconductor/normal conductor/superconductor device
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U2 - 10.1016/S0921-4534(02)00686-X
DO - 10.1016/S0921-4534(02)00686-X
M3 - Article
AN - SCOPUS:0036683603
SN - 0921-4534
VL - 372-376
SP - 1
EP - 6
JO - Physica C: Superconductivity and its applications
JF - Physica C: Superconductivity and its applications
IS - PART 1
ER -