Energy relaxation of hot carriers in graphene via plasmon interactions

D. K. Ferry, R. Somphonsane, H. Ramamoorthy, J. P. Bird

Research output: Contribution to journalArticle

Abstract

Energy relaxation of hot carriers in graphene is studied theoretically and experimentally at low temperatures, where the loss rate may differ significantly from that predicted for electron–phonon interactions. We show here that plasmons, important in the relaxation of energetic carriers in bulk semiconductors, can also provide a pathway for energy relaxation in transport experiments in graphene. Reflecting the linear nature of graphene’s bands, we obtain a total loss rate to plasmons that is independent of carrier density. This results in energy relaxation times whose dependence on temperature and density closely matches that reported experimentally.

Original languageEnglish (US)
Pages (from-to)144-153
Number of pages10
JournalJournal of Computational Electronics
Volume15
Issue number1
DOIs
StatePublished - Mar 1 2016

Fingerprint

Plasmons
Plasmon
Hot carriers
Graphite
Graphene
graphene
plasmons
Energy
Interaction
Relaxation time
Electron-phonon Interaction
Carrier concentration
interactions
Time Dependence
Semiconductor materials
Relaxation Time
Temperature
time dependence
energy
Semiconductors

Keywords

  • Carrier heating
  • Energy relaxation
  • Graphene
  • Plasmons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Modeling and Simulation

Cite this

Energy relaxation of hot carriers in graphene via plasmon interactions. / Ferry, D. K.; Somphonsane, R.; Ramamoorthy, H.; Bird, J. P.

In: Journal of Computational Electronics, Vol. 15, No. 1, 01.03.2016, p. 144-153.

Research output: Contribution to journalArticle

Ferry, D. K. ; Somphonsane, R. ; Ramamoorthy, H. ; Bird, J. P. / Energy relaxation of hot carriers in graphene via plasmon interactions. In: Journal of Computational Electronics. 2016 ; Vol. 15, No. 1. pp. 144-153.
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