Abstract
Using a full band Monte Carlo simulation the electron energy relaxation times of InAs nanowires along the [100] direction are shown to be greater than the energy relaxation time of bulk InAs. The full band structure and scattering rates of the nanowires are calculated using the sp3d5s∗ tight binding method and Fermi's Golden rule respectively. At moderately high electric fields, a runaway effect is also observed in the nanowires and is attributed to the 1D nature of the scattering rates.
| Original language | English (US) |
|---|---|
| Article number | 012029 |
| Journal | Journal of Physics: Conference Series |
| Volume | 647 |
| Issue number | 1 |
| DOIs | |
| State | Published - Oct 13 2015 |
| Event | 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2015 - Salamanca, Spain Duration: Jun 29 2015 → Jul 2 2015 |
ASJC Scopus subject areas
- Physics and Astronomy(all)