Using a full band Monte Carlo simulation the electron energy relaxation times of InAs nanowires along the  direction are shown to be greater than the energy relaxation time of bulk InAs. The full band structure and scattering rates of the nanowires are calculated using the sp3d5s∗ tight binding method and Fermi's Golden rule respectively. At moderately high electric fields, a runaway effect is also observed in the nanowires and is attributed to the 1D nature of the scattering rates.
|Original language||English (US)|
|Journal||Journal of Physics: Conference Series|
|State||Published - Oct 13 2015|
|Event||19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, EDISON 2015 - Salamanca, Spain|
Duration: Jun 29 2015 → Jul 2 2015
ASJC Scopus subject areas
- Physics and Astronomy(all)