Energy-gap narrowing and state filling in semiconductors under intense laser irradiation

D. K. Ferry

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

Detailed calculations of the time and energy dependence of the distribution function for optically created electrons in the conduction band of Ge are presented. These indicate that state filling in the conduction and valence bands are strongly controlled by energy-gap narrowing induced by the optically generated interacting electrons and holes.

Original languageEnglish (US)
Pages (from-to)7033-7037
Number of pages5
JournalPhysical Review B
Volume18
Issue number12
DOIs
StatePublished - Jan 1 1978

ASJC Scopus subject areas

  • Condensed Matter Physics

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