TY - JOUR
T1 - Energy exchange in single-particle electron-electron scattering
AU - Ferry, D. K.
AU - Goodnick, Stephen
AU - Hess, K.
N1 - Funding Information:
This work was supported in part by the Office of Naval Research. The authors are indebted to Blair Tuttle, Umberto Ravaioli, Frank Register, Dragica Vasileska, and Richard Akis for helpful discussions.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - Electron-electron scattering has been of interest in the treatment of hot carriers for several decades. Recently, the details of this scattering process have become much more important with regard to the degradation of Si MOS transistors, where it is suggested that intercarrier scattering excites electrons well above 3 eV, even with only 2 V bias. On the other hand, it is generally found that the energy exchange found in the electron-electron interaction is quite small. As a consequence, we have examined the detailed energy loss (gain) through the electron-electron interaction for carriers in Si. This is evaluated assuming a thermal Maxwellian hot carrier distribution at 2500 K and the parameters for Si. We find that the energy exchange is highly peaked around small energies (less than 20 meV), and falls off rapidly with energy.
AB - Electron-electron scattering has been of interest in the treatment of hot carriers for several decades. Recently, the details of this scattering process have become much more important with regard to the degradation of Si MOS transistors, where it is suggested that intercarrier scattering excites electrons well above 3 eV, even with only 2 V bias. On the other hand, it is generally found that the energy exchange found in the electron-electron interaction is quite small. As a consequence, we have examined the detailed energy loss (gain) through the electron-electron interaction for carriers in Si. This is evaluated assuming a thermal Maxwellian hot carrier distribution at 2500 K and the parameters for Si. We find that the energy exchange is highly peaked around small energies (less than 20 meV), and falls off rapidly with energy.
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U2 - 10.1016/S0921-4526(99)00335-X
DO - 10.1016/S0921-4526(99)00335-X
M3 - Conference article
AN - SCOPUS:0033345629
VL - 272
SP - 538
EP - 541
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1-4
T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)
Y2 - 19 July 1999 through 23 July 1999
ER -