Energy-Efficient Nonvolatile Reconfigurable Logic Using Spin Hall Effect-Based Lookup Tables

Ramtin Zand, Arman Roohi, Deliang Fan, Ronald F. DeMara

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

In this paper, we leverage magnetic tunnel junction (MTJ) devices to design an energy-efficient nonvolatile lookup table (LUT), which utilizes a spin Hall effect (SHE) assisted switching approach for MTJ storage cells. SHE-MTJ characteristics are modeled in Verilog-A based on precise physical equations. Functionality of the proposed SHE-MTJ-based LUT is validated using SPICE simulation. Our proposed SHE - MTJ-based LUT (SHE-LUT) is compared with the most energy-efficient MTJ-based LUT circuits. The obtained results show more than 6%, 37%, and 67% improvement over three previous MTJ-based designs in term of read energy consumption. Moreover, the reconfiguration delay and energy of the proposed design is compared with that of the MTJ-based LUTs which utilize the spin transfer torque (STT) switching approach for reconfiguration. The results exhibit that SHE-LUT can operate at 78% higher clock frequency while achieving at least 21% improvement in terms of reconfiguration energy consumption. The operation-specific clocking mechanisms for managing the SHE-LUT operations are introduced along with detailed analyses concerning tradeoffs. Results are extended to design a 6-input fracturable LUT using SHE-MTJs.

Original languageEnglish (US)
Article number7737024
Pages (from-to)32-43
Number of pages12
JournalIEEE Transactions on Nanotechnology
Volume16
Issue number1
DOIs
StatePublished - Jan 2017
Externally publishedYes

Keywords

  • Fracturable LUT
  • magnetic tunnel junction
  • reconfigurable fabric
  • spin Hall effect
  • spin transfer torque
  • spin-based memory cell

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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