Abstract
In this paper, we leverage magnetic tunnel junction (MTJ) devices to design an energy-efficient nonvolatile lookup table (LUT), which utilizes a spin Hall effect (SHE) assisted switching approach for MTJ storage cells. SHE-MTJ characteristics are modeled in Verilog-A based on precise physical equations. Functionality of the proposed SHE-MTJ-based LUT is validated using SPICE simulation. Our proposed SHE - MTJ-based LUT (SHE-LUT) is compared with the most energy-efficient MTJ-based LUT circuits. The obtained results show more than 6%, 37%, and 67% improvement over three previous MTJ-based designs in term of read energy consumption. Moreover, the reconfiguration delay and energy of the proposed design is compared with that of the MTJ-based LUTs which utilize the spin transfer torque (STT) switching approach for reconfiguration. The results exhibit that SHE-LUT can operate at 78% higher clock frequency while achieving at least 21% improvement in terms of reconfiguration energy consumption. The operation-specific clocking mechanisms for managing the SHE-LUT operations are introduced along with detailed analyses concerning tradeoffs. Results are extended to design a 6-input fracturable LUT using SHE-MTJs.
Original language | English (US) |
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Article number | 7737024 |
Pages (from-to) | 32-43 |
Number of pages | 12 |
Journal | IEEE Transactions on Nanotechnology |
Volume | 16 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2017 |
Externally published | Yes |
Keywords
- Fracturable LUT
- magnetic tunnel junction
- reconfigurable fabric
- spin Hall effect
- spin transfer torque
- spin-based memory cell
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering