Abstract

We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.

Original languageEnglish (US)
Pages (from-to)8434-8440
Number of pages7
JournalThin Solid Films
Volume519
Issue number24
DOIs
StatePublished - Oct 3 2011

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Keywords

  • Endotaxy
  • Epitaxy
  • Nanowire
  • Silicide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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