Endotaxial silicide nanowires: A review

Peter Bennett; Zhian He; David Smith; F. M. Ross

doi:10.1016/j.tsf.2011.05.034

Endotaxial silicide nanowires: A review

Peter Bennett, Zhian He, David Smith, F. M. Ross

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.

Original language	English (US)
Pages (from-to)	8434-8440
Number of pages	7
Journal	Thin Solid Films
Volume	519
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2011.05.034
State	Published - Oct 3 2011

Keywords

Endotaxy
Epitaxy
Nanowire
Silicide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.05.034

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title = "Endotaxial silicide nanowires: A review",

abstract = "We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.",

keywords = "Endotaxy, Epitaxy, Nanowire, Silicide",

author = "Peter Bennett and Zhian He and David Smith and Ross, {F. M.}",

note = "Funding Information: We gratefully acknowledge the use of facilities in the J. M. Cowley Center for High Resolution Electron Microscopy and support from NSF grants ECS0304682 and DMR0503705 for much of the work reported above. ",

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T1 - Endotaxial silicide nanowires

T2 - A review

AU - Bennett, Peter

AU - He, Zhian

AU - Smith, David

AU - Ross, F. M.

N1 - Funding Information: We gratefully acknowledge the use of facilities in the J. M. Cowley Center for High Resolution Electron Microscopy and support from NSF grants ECS0304682 and DMR0503705 for much of the work reported above.

PY - 2011/10/3

Y1 - 2011/10/3

N2 - We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.

AB - We review the topic of self-assembled endotaxial silicide nanowires on silicon. Crystallographic orientation, lattice mismatch and average dimensions are discussed for a variety of systems including Ti, Mn, Fe, Co, Ni, Pt and several rare earths on Si(100), Si(111) and Si(110) surfaces. In situ observations of growth dynamics support a constant-shape growth model, in which length, width and thickness all change in proportion as the nanowire grows, with thermally activated, facet-dependent rates.

KW - Endotaxy

KW - Epitaxy

KW - Nanowire

KW - Silicide

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M3 - Article

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EP - 8440

JO - Thin Solid Films

JF - Thin Solid Films

IS - 24

ER -

Endotaxial silicide nanowires: A review

Abstract

Keywords

ASJC Scopus subject areas

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