TY - JOUR
T1 - Endotaxial silicide nanowires
AU - He, Zhian
AU - Smith, David
AU - Bennett, Peter
N1 - Funding Information:
This work was supported by NSF NIRT Grant No. ECS-0304682. We acknowledge use of facilities in the J. M. Cowley Center for High-Resolution Electron Microscopy.
PY - 2004/12/17
Y1 - 2004/12/17
N2 - A method was proposed for the endotaxy growth of the self-assembled nanowires (NW) of cobalt silicide on Si(111), (100), and (110) substrates. This method does not require anisotropic lattice mismatch. Endotaxial NW growth on Si(110) is possible for A-type, or B-type or hexagonal interfaces, which opens further possibilities. The results indicate that the endotaxial NW growth is relatively flexible, and suggests that other systems, beyond silicide/silicon, may form NWs by the same mechanism.
AB - A method was proposed for the endotaxy growth of the self-assembled nanowires (NW) of cobalt silicide on Si(111), (100), and (110) substrates. This method does not require anisotropic lattice mismatch. Endotaxial NW growth on Si(110) is possible for A-type, or B-type or hexagonal interfaces, which opens further possibilities. The results indicate that the endotaxial NW growth is relatively flexible, and suggests that other systems, beyond silicide/silicon, may form NWs by the same mechanism.
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U2 - 10.1103/PhysRevLett.93.256102
DO - 10.1103/PhysRevLett.93.256102
M3 - Article
AN - SCOPUS:42749105358
SN - 0031-9007
VL - 93
JO - Physical Review Letters
JF - Physical Review Letters
IS - 25
M1 - 256102
ER -