Abstract

A method was proposed for the endotaxy growth of the self-assembled nanowires (NW) of cobalt silicide on Si(111), (100), and (110) substrates. This method does not require anisotropic lattice mismatch. Endotaxial NW growth on Si(110) is possible for A-type, or B-type or hexagonal interfaces, which opens further possibilities. The results indicate that the endotaxial NW growth is relatively flexible, and suggests that other systems, beyond silicide/silicon, may form NWs by the same mechanism.

Original languageEnglish (US)
Article number256102
JournalPhysical Review Letters
Volume93
Issue number25
DOIs
StatePublished - Dec 17 2004

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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