Abstract
Ag/Ti bilayer films deposited on silicon dioxide substrates were annealed in ammonia ambient in the temperature range of 400 - 600 °C. Rutherford backscattering spectrometry (RBS) and Auger electron spectroscopy (AES) have shown that Ti segregates to both the surface to form a TiN(O) layer and to the Ti/SiO 2 interface to form a Ti-oxide/Ti-silicide bilayer. The annealed bilayer structure had minimal Ti accumulations in Ag. Resistivity values of approximately 2 μΩ-cm were obtained in encapsulated Ag bilayer films, which are comparable to that of the as-deposited. X-ray analysis confirmed the absence of intermetallic phase transformation.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | S. Coffa, A. Polman, R.N. Schwartz |
| Publisher | Materials Research Society |
| Pages | 355-360 |
| Number of pages | 6 |
| Volume | 427 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996 |
Other
| Other | Proceedings of the 1996 MRS Spring Symposium |
|---|---|
| City | San Francisco, CA, USA |
| Period | 4/8/96 → 4/12/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials