Encapsulated silver for integrated circuit metallization

Daniel Adams, Terry Alford

Research output: Contribution to journalReview articlepeer-review

22 Scopus citations

Abstract

Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.

Original languageEnglish (US)
Pages (from-to)207-250
Number of pages44
JournalMaterials Science and Engineering R: Reports
Volume40
Issue number6
DOIs
StatePublished - Jun 3 2003

Keywords

  • Dielectrics
  • Electromigration
  • Encapsulation
  • Resistivity
  • Silver
  • Stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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