Encapsulated silver for integrated circuit metallization

Daniel Adams; Terry Alford

doi:10.1016/S0927-796X(03)00025-1

Encapsulated silver for integrated circuit metallization

Daniel Adams, Terry Alford

Research output: Contribution to journal › Review article › peer-review

22 Scopus citations

Abstract

Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.

Original language	English (US)
Pages (from-to)	207-250
Number of pages	44
Journal	Materials Science and Engineering R: Reports
Volume	40
Issue number	6
DOIs	https://doi.org/10.1016/S0927-796X(03)00025-1
State	Published - Jun 3 2003

Keywords

Dielectrics
Electromigration
Encapsulation
Resistivity
Silver
Stress

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1016/S0927-796X(03)00025-1

Cite this

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title = "Encapsulated silver for integrated circuit metallization",

abstract = "Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.",

keywords = "Dielectrics, Electromigration, Encapsulation, Resistivity, Silver, Stress",

author = "Daniel Adams and Terry Alford",

note = "Funding Information: The work was partially supported by the National Science Foundation (NSF) to whom the authors are greatly indebted. Support for the Center for Low Power Electronics is partially provided by the NSF, State of Arizona, Analog Devices, Analogy, Burr-Brown, Hughes Aircraft, Intel, Microchip, Motorola, National Semiconductor Rockwell, Scientific Monitoring, Texas Instruments and Western Design Center. The authors also would like to express their sincere thanks to the National Research Foundation (NRF) and the University of the Western Cape in South Africa for their financial support.",

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AU - Alford, Terry

N1 - Funding Information: The work was partially supported by the National Science Foundation (NSF) to whom the authors are greatly indebted. Support for the Center for Low Power Electronics is partially provided by the NSF, State of Arizona, Analog Devices, Analogy, Burr-Brown, Hughes Aircraft, Intel, Microchip, Motorola, National Semiconductor Rockwell, Scientific Monitoring, Texas Instruments and Western Design Center. The authors also would like to express their sincere thanks to the National Research Foundation (NRF) and the University of the Western Cape in South Africa for their financial support.

PY - 2003/6/3

Y1 - 2003/6/3

N2 - Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.

AB - Silver has all the properties to complement copper for multilayer metallization in integrated circuit technology. The obvious drawbacks to Ag in terms of agglomeration and corrosion are overcome by use of encapsulation layers. The objective of this issue is to provide readers with a survey of some active areas in Ag-based metallization for interconnects ULSI applications. This work reflects the current research progress in this field from several different perspectives and provides advanced metallization solutions for future integrated circuit manufacturing.

KW - Dielectrics

KW - Electromigration

KW - Encapsulation

KW - Resistivity

KW - Silver

KW - Stress

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JO - Materials Science and Engineering R: Reports

JF - Materials Science and Engineering R: Reports

IS - 6

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Encapsulated silver for integrated circuit metallization

Abstract

Keywords

ASJC Scopus subject areas

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