Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials

Salvador Gonzalez, Dragica Vasileska, Alexander A. Demkov

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

The band structure of strained-silicon germanium (Si1 − xGex) is calculated as a preliminary step in developing a full band Monte Carlo (FBMC) simulator. The band structure for the alloy is calculated using the empirical pseudopotential method (EPM) within the virtual crystal approximation (VCA). Spin-orbit interaction is included into the calculation via the Löwdin quasi-degenerate perturbation theory, which significantly reduces the computation time. Furthermore, strain is included by utilizing basic elastic theory. Ultimately, the band structure for strained Si1 − xGex is calculated at various germanium concentrations.

Original languageEnglish (US)
Pages (from-to)179-183
Number of pages5
JournalJournal of Computational Electronics
Volume1
Issue number1-2
DOIs
StatePublished - Jul 1 2002

Keywords

  • band structure calculation
  • empirical pseudopotential method
  • strained-silicon germanium
  • virtual crystal approximation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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