Empirical pseudopotential band structure parameters of 4H-SiC using a genetic algorithm fitting routine

Chemical Compounds

• Pseudopotential 90%
• Structure Parameter 88%
• Electronic Band Structure 71%
• Effective Mass 66%
• Band Gap 35%
• Calculation Method 25%
• Conduction Band 25%

Engineering & Materials Science

• Band structure 100%
• Genetic algorithms 50%
• Energy gap 40%
• Conduction bands 30%

Physics & Astronomy

• genetic algorithms 80%
• pseudopotentials 71%
• viability 19%
• form factors 17%
• conduction bands 15%